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Low temperature plasma enhanced chemical vapor deposition of silicon oxide films using disilane and nitrous oxide

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Abstract

Silicon oxide films have been deposited between room temperature and 300°C using disilane and nitrous oxide by plasma enhanced chemical vapor deposition. Film deposition was investigated as a function of the gas flow ratio of nitrous oxide to disilane, the substrate temperature, the total gas flow rate, the radio frequency discharge power, and the process pressure. The stoichiometric SiO2 films were obtained when the gas ratio of nitrous oxide to disilane was in the range of 50-150. The deposition was found to be nearly temperature independent indicating the mass transport limited regime.

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Authors and Affiliations

  1. Solid State Laboratory, Department of Electrical and Computer Engineering, Louisiana State University, 70803-5901, Baton Rouge, LA

    Juho Song, G. S. Lee & P. K. Ajmera

Authors
  1. Juho Song
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  2. G. S. Lee
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  3. P. K. Ajmera
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Song, J., Lee, G.S. & Ajmera, P.K. Low temperature plasma enhanced chemical vapor deposition of silicon oxide films using disilane and nitrous oxide. J. Electron. Mater. 24, 1507–1510 (1995). https://doi.org/10.1007/BF02655469

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  • DOI: https://doi.org/10.1007/BF02655469

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