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Accurate measurement of capture cross sections in deep level transient spectroscopy: Application to EL2 in GaAs

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Abstract

A rigorous formulation of capacitance changes during trap filling processes is presented and used to accurately determine the electron capture cross section of EL2 in GaAs at a particular temperature, 377K, in this case. The value, σn (377K) = 2.7 × 10−16 cm2, is compared with that predicted from the emission dependence.

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References

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Authors and Affiliations

  1. University Research Center, Wright State University, 45435, Dayton, OH

    D. C. Look & Z. -Q. Fang

  2. Solid State Electronics Directorate, Wright Laboratory, WL/ELRA, 45433, Wright-Patterson Air Force Base, OH

    J. R. Sizelove

Authors
  1. D. C. Look
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  2. Z. -Q. Fang
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  3. J. R. Sizelove
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Look, D.C., Fang, Z.Q. & Sizelove, J.R. Accurate measurement of capture cross sections in deep level transient spectroscopy: Application to EL2 in GaAs. J. Electron. Mater. 24, 1461–1464 (1995). https://doi.org/10.1007/BF02655464

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  • DOI: https://doi.org/10.1007/BF02655464

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