Current-voltage characteristics of MnGa2Se4 single crystals B. G. TagievO. B. TagievQ. Y. Eyyubov Electronic Properties of Semiconductors 05 June 2012 Pages: 701 - 704
Optical transitions in MnGa2Se4 B. G. TagievT. G. KerimovaI. A. Mamedova Electronic Properties of Semiconductors 05 June 2012 Pages: 705 - 707
Effect of the structural features of polycrystalline semiconductor films on the formation of anomalous photovoltage: I. Phenomenon mechanism Sh. B. AtakulovS. M. ZainolobidinovaO. A. Tukhtamatov Electronic Properties of Semiconductors 05 June 2012 Pages: 708 - 713
Effect of the structural features of polycrystalline semiconductor films on the formation of anomalous photovoltage: II. Comparison with experiment Sh. B. AtakulovS. M. ZainolobidinovaO. A. Tukhtamatov Electronic Properties of Semiconductors 05 June 2012 Pages: 714 - 718
Structural and spectral features of MOCVD Al x Ga y In1 − x − y As z P1 − z /GaAs (100) alloys P. V. SeredinA. V. GlotovI. S. Tarasov Electronic Properties of Semiconductors 05 June 2012 Pages: 719 - 729
Dependence of carrier mobility on an electric field in gallium selenide crystals A. Sh. AbdinovR. F. BabaevaR. M. Rzayev Electronic Properties of Semiconductors 05 June 2012 Pages: 730 - 735
Effect of the finishing treatment of a gallium arsenide surface on the spectrum of electron states in n-GaAs (100) N. N. BezryadinG. I. KotovA. A. Starodubtsev Electronic Properties of Semiconductors 05 June 2012 Pages: 736 - 740
Vanadium deep impurity level in diluted magnetic semiconductors Pb1 − x − y Sn x V y Te E. P. SkipetrovA. N. GolovanovV. E. Slyn’ko Electronic Properties of Semiconductors 05 June 2012 Pages: 741 - 748
Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties A. V. EmelyanovA. G. KazanskiiP. Kazansky Spectroscopy, Interaction with Radiation 05 June 2012 Pages: 749 - 754
Electron states at electrolyte/n-GaN and electrolyte/n-InGaN interfaces M. E. RudinskyA. A. GutkinP. N. Brunkov Surfaces, Interfaces, and Thin Films 05 June 2012 Pages: 755 - 758
Quantum corrections to conductivity under conditions of the integer quantum Hall effect A. A. Greshnov Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 June 2012 Pages: 759 - 768
The adsorption effect of C6H5 on density of states for double wall carbon nanotubes by tight binding model A. Fathalian Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 June 2012 Pages: 769 - 772
Optical transitions in Cd x Hg1 − x Te-based quantum wells and their analysis with account for the actual band structure of the material N. L. BazhenovA. V. ShilyaevG. G. Zegrya Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 June 2012 Pages: 773 - 778
Creation and studies of the photosensitivity of Ox/n-GaP structures V. Yu. Rud’Yu. V. Rud’T. N. Ushakova Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 June 2012 Pages: 779 - 782
Photosensitive Ox/GaAs heterojunctions: Creation and properties V. Yu. Rud’Yu. V. Rud’T. N. Ushakova Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 June 2012 Pages: 783 - 785
Energy structure of non-hydrogen-like impurities in quantum wells without spin-orbit coupling K. S. RomanovN. S. Averkiev Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 June 2012 Pages: 786 - 789
Interaction of carbon dioxide laser radiation with a nanotube array in the presence of a constant electric field N. R. SadykovN. A. Scorkin Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena 05 June 2012 Pages: 790 - 795
Electroluminescence of GaP x N y As1 − x − y nanoheterostructures through a transparent electrode made of CVD graphene A. V. BabichevV. Yu. ButkoA. Yu. Egorov Carbon Systems 05 June 2012 Pages: 796 - 800
Effect of Pt, Pd, Au additives on the surface and in the bulk of tin dioxide thin films on the electrical and gas-sensitive properties E. Y. SevastyanovN. K. MaksimovaE. V. Chernikov Physics of Semiconductor Devices 05 June 2012 Pages: 801 - 809
Response function and optimum configuration of semiconductor backscattered-electron detectors for scanning electron microscopes E. I. RauN. A. OrlikovskiyE. S. Ivanova Physics of Semiconductor Devices 05 June 2012 Pages: 810 - 813
Radiation-induced surface degradation of GaAs and high electron mobility transistor structures A. V. BobylS. G. KonnikovI. V. Prokopenko Physics of Semiconductor Devices 05 June 2012 Pages: 814 - 824
Controlled Growth of one-dimensional zinc oxide nanostructures in the pulsed electrodeposition mode N. P. KlochkoG. S. KhrypunovA. V. Kopach Fabrication, Treatment, and Testing of Materials and Structures 05 June 2012 Pages: 825 - 831
Effect of the temperature during deposition of AlO x films by spray pyrolysis on their passivating properties in a silicon solar cell G. G. UntilaT. N. KostO. I. Solodukha Fabrication, Treatment, and Testing of Materials and Structures 05 June 2012 Pages: 832 - 837
Effect of diffusion from a lateral surface on the rate of GaN nanowire growth N. V. SibirevM. TchernychevaV. G. Dubrovskii Fabrication, Treatment, and Testing of Materials and Structures 05 June 2012 Pages: 838 - 841