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Optical transitions in MnGa2Se4

  • Electronic Properties of Semiconductors
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Abstract

The dependence of the absorption coefficient on incident photon energy in a MnGa2Se4 single crystal has been investigated in the temperature range 110–295 K. Using group-theory analysis of the electron state symmetry and comparison of the symmetry of the energy spectrum of MnGa2Se4 and its isoelectronic analogs, a conclusion about the character of optical transitions has been drawn. It is shown that the features observed at 2.31 and 2.45 eV are related to the intracenter transitions 6 A 11 → 4 T 2(4 G) and 6 A 21 → 4 T 2(4 G). The 6 A 1 state is split by the crystal field.

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Authors and Affiliations

  1. Institute of Physics, National Academy of Sciences of Azerbaijan, pr. H. Javid 33, Baku, Az-1143, Azerbaijan

    B. G. Tagiev, T. G. Kerimova, O. B. Tagiev, S. G. Asadullayeva & I. A. Mamedova

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  1. B. G. Tagiev
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  2. T. G. Kerimova
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  3. O. B. Tagiev
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  4. S. G. Asadullayeva
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  5. I. A. Mamedova
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Corresponding author

Correspondence to T. G. Kerimova.

Additional information

Original Russian Text © B.G. Tagiev, T.G. Kerimova, O.B. Tagiev, S.G. Asadullayeva, I.A. Mamedova, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 6, pp. 725–727.

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Tagiev, B.G., Kerimova, T.G., Tagiev, O.B. et al. Optical transitions in MnGa2Se4 . Semiconductors 46, 705–707 (2012). https://doi.org/10.1134/S1063782612060243

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  • DOI: https://doi.org/10.1134/S1063782612060243

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