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Photosensitive Ox/GaAs heterojunctions: Creation and properties

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

A method for the thermal oxidation of GaAs crystals in air is suggested and the first photosensitive Ox/n-GaAs heterojunctions, where Ox is a native oxide, are fabricated. The steady current-voltage characteristics and spectra of relative quantum efficiency of the new structures are studied. The features of the spectra of photoactive absorption of the obtained heterojunctions are discussed. The potential of using vacuumfree thermal oxidation of the GaAs crystals in air to fabricate broadband heterophotoconverters of optical radiation on their basis is established.

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Authors and Affiliations

  1. St. Petersburg State Polytechnical University, ul. Politekhnicheskaya 29, St. Petersburg, 195257, Russia

    V. Yu. Rud’

  2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    Yu. V. Rud’, E. I. Terukov & T. N. Ushakova

Authors
  1. V. Yu. Rud’
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  2. Yu. V. Rud’
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  3. E. I. Terukov
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  4. T. N. Ushakova
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Correspondence to Yu. V. Rud’.

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Original Russian Text © V.Yu. Rud’, Yu.V. Rud’, E.I. Terukov, T.N. Ushakova, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 6, pp. 802–804.

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Rud’, V.Y., Rud’, Y.V., Terukov, E.I. et al. Photosensitive Ox/GaAs heterojunctions: Creation and properties. Semiconductors 46, 783–785 (2012). https://doi.org/10.1134/S1063782612060164

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  • DOI: https://doi.org/10.1134/S1063782612060164

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