Abstract
The effect of the femtosecond laser treatment of hydrogenated amorphous silicon (a-Si:H) films on their structural, optical, and photoelectric properties is studied. Under the experimental conditions applied in the study, laser treatment of the film with different radiation intensities induces structural changes that are nonuniform over the film surface. An increase in the radiation intensity yields an increase in the contribution of the nanocrystalline phase to the structure, averaged over the sample surface, as well as an increase in the conductance and photoconductance of the samples. At the same time, for all of the samples, the absorption spectrum obtained by the constant-photocurrent method has a shape typical for those of amorphous silicon. Obtained results indicate the possibility of a-Si:H films photoconductance increase by femtosecond pulse laser treatment.
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Original Russian Text © A.V. Emelyanov, A.G. Kazanskii, P.K. Kashkarov, O.I. Konkov, E.I. Terukov, P.A. Forsh, M.V. Khenkin, A.V. Kukin, M. Beresna, P. Kazansky, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 6, pp. 769–774.
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Emelyanov, A.V., Kazanskii, A.G., Kashkarov, P.K. et al. Effect of the femtosecond laser treatment of hydrogenated amorphous silicon films on their structural, optical, and photoelectric properties. Semiconductors 46, 749–754 (2012). https://doi.org/10.1134/S1063782612060097
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DOI: https://doi.org/10.1134/S1063782612060097