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Creation and studies of the photosensitivity of Ox/n-GaP structures

  • Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena
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Abstract

Photosensitive heterostructures Ox/n-GaP, where Ox is a native oxide, are created for the first time by thermal interaction of a GaP crystal with ambient air. The photovoltaic effect of the heterostructures, which dominates upon illumination of the structure’s oxide film, is revealed. First, the spectral dependences of the relative quantum efficiency of photoconversion for the obtained heterostructures are analyzed, the character of the band-to-band transitions is determined, and the GaP band gap is estimated. A conclusion is drawn regarding the potential of using the vacuum-free thermal oxidation of homogeneous n-GaP single crystals in ambient air to fabricate broadband photoconverters of optical radiation.

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Authors and Affiliations

  1. St. Petersburg State Polytechnical University, ul. Politekhnicheskaya 29, St. Petersburg, 195251, Russia

    V. Yu. Rud’

  2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, Russia

    Yu. V. Rud’, E. I. Terukov & T. N. Ushakova

Authors
  1. V. Yu. Rud’
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  2. Yu. V. Rud’
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  3. E. I. Terukov
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  4. T. N. Ushakova
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Corresponding author

Correspondence to V. Yu. Rud’.

Additional information

Original Russian Text © V.Yu. Rud’, Yu.V. Rud’, E.I. Terukov, T.N. Ushakova, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 6, pp. 798–801.

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Rud’, V.Y., Rud’, Y.V., Terukov, E.I. et al. Creation and studies of the photosensitivity of Ox/n-GaP structures. Semiconductors 46, 779–782 (2012). https://doi.org/10.1134/S1063782612060152

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  • DOI: https://doi.org/10.1134/S1063782612060152

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