Abstract
The kinetics of the growth of GaN crystalline nanowires on a Si (111) surface with no catalyst is studied experimentally and theoretically. Noncatalytic GaN nanowires were grown by molecular-beam epitaxy with AlN inserts, which makes it possible to determine the rate of the vertical growth of nanowires. A model for the formation of GaN nanowires is developed, and an expression for their rate of growth is derived. It is shown that, in the general case, the dependence of the rate of growth on the nanowire diameter has a minimum. The diameter corresponding to the experimentally observed minimum of the rate of growth steadily increases with increasing diffusion flux from the lateral surface.
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Original Russian Text © N.V. Sibirev, M. Tchernycheva, G.E. Cirlin, G. Patriarche, J.C. Harmand, V.G. Dubrovskii, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 6, pp. 857–860.
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Sibirev, N.V., Tchernycheva, M., Cirlin, G.E. et al. Effect of diffusion from a lateral surface on the rate of GaN nanowire growth. Semiconductors 46, 838–841 (2012). https://doi.org/10.1134/S1063782612060218
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DOI: https://doi.org/10.1134/S1063782612060218