Abstract
The effect of the deposition temperature of AlO x in the range 330–530°C by spray pyrolysis on the rear-surface parameters of silicon (n + pp +)Cz-Si/AlO x solar cells has been studied. It is found that, as the temperature of AlO x deposition is increased, all parameters of the rear surfaces decrease; e.g., the photocurrent density decreases from 25.4 to 24.1 mA/cm2; the photovoltage decreases from 611 to 598 mV; and the efficiency decreases from 12.2 to 10.9%. This indicates that passivation of the p +-type surface with AlO x films becomes less effective. It is concluded that, as the temperature of AlO x deposition is increased, the value of the positive charge incorporated into the nonstoichiometric interphase SiO x layer formed between c-Si and AlO x in the course of AlO x deposition, which brings about screening of the negative charge localized at the AlOx-SiOx interface and, respectively, a decrease in the field-induced passivation, increases.
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Original Russian Text © G.G. Untila, T.N. Kost, A.B. Chebotareva, M.B. Zaks, A.M. Sitnikov, O.I. Solodukha, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 6, pp. 852–856.
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Untila, G.G., Kost, T.N., Chebotareva, A.B. et al. Effect of the temperature during deposition of AlO x films by spray pyrolysis on their passivating properties in a silicon solar cell. Semiconductors 46, 832–837 (2012). https://doi.org/10.1134/S1063782612060255
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DOI: https://doi.org/10.1134/S1063782612060255