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Response function and optimum configuration of semiconductor backscattered-electron detectors for scanning electron microscopes

  • Physics of Semiconductor Devices
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Abstract

A new highly efficient design for semiconductor detectors of intermediate-energy electrons (1–50 keV) for application in scanning electron microscopes is proposed. Calculations of the response function of advanced detectors and control experiments show that the efficiency of the developed devices increases on average twofold, which is a significant positive factor in the operation of modern electron microscopes in the mode of low currents and at low primary electron energies.

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Authors and Affiliations

  1. Moscow State University, Moscow, 119991, Russia

    E. I. Rau & E. S. Ivanova

  2. Physical Technological Institute, Russian Academy of Sciences, Nakhimovskii pr. 36/1, Moscow, 117218, Russia

    N. A. Orlikovskiy

  3. Institute of Microelectronics Technology and High-Purity Materials, Russian Academy of Sciences, Institutskaya ul. 6, Chernogolovka, Moscow oblast, 142432, Russia

    E. I. Rau

Authors
  1. E. I. Rau
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  2. N. A. Orlikovskiy
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  3. E. S. Ivanova
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Original Russian Text © E.I. Rau, N.A. Orlikovskiy, E.S. Ivanova, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 6, pp. 829–832.

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Rau, E.I., Orlikovskiy, N.A. & Ivanova, E.S. Response function and optimum configuration of semiconductor backscattered-electron detectors for scanning electron microscopes. Semiconductors 46, 810–813 (2012). https://doi.org/10.1134/S1063782612060139

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  • DOI: https://doi.org/10.1134/S1063782612060139

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