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Effect of the finishing treatment of a gallium arsenide surface on the spectrum of electron states in n-GaAs (100)

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Abstract

Deep level transient spectroscopy has been used to study the effect of substrate pretreatment on the spectrum of electron states in Au/n-GaAs(100) Schottky diodes. Two bands of energy-distributed states have been found near the metal/semiconductor interface. The first band appears in the spectra at temperatures of 200–300 K because elemental arsenic accumulates on the surface in clusters in the course of oxide formation in samples exposed to air. Surface disorder in the course of selective etching gives rise to the second band at 100–250 K. Annealing in selenium vapor heals defects in the surface region and removes both bands from the spectra. Samples annealed in Se2 contain only the set of levels characteristic of bulk GaAs.

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References

  1. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts (Clarendon, Oxford, 1988; Radio i svyaz’, Moscow, 1982).

    Google Scholar 

  2. G. M. Mokrousov and O. N. Zarubina, Izv. Tomsk. Politekh. Univ. 313(3), 25 (2008).

    Google Scholar 

  3. A. Seletes, F. Turco, J. Massies, and J. P. Contour, J. Electrochem. Soc. 135, 504 (1988).

    Article  Google Scholar 

  4. N. A. Torkhov, Semiconductors 37, 1177 (2003).

    Article  ADS  Google Scholar 

  5. V. G. Bozhkov, N. A. Torkhov, I. V. Ivonin, and V. A. Novikov, Semiconductors 42, 531 (2008).

    Article  ADS  Google Scholar 

  6. C. D. Thurmond, G. P. Schwartz, G. W. Kammlott, and B. Schwartz, Solid State Sci. Technol. 127, 1366 (1980).

    Google Scholar 

  7. Hong H. Lee and L. Figueroa, J. Electrochem. Soc. 135, 496 (1988).

    Article  Google Scholar 

  8. P. J. Grunthaner, R. P. Vasquez, and F. J. Crunthaner, J. Vac. Sci. Technol. 17, 1945 (1980).

    Google Scholar 

  9. G. Hollinger, R. Skheyta-Kabbani, and M. Gendry, Phys. Rev. B 49, 11159 (1994).

    Article  ADS  Google Scholar 

  10. A. G. Baca and Carol Iris Hill Ashby, Fabrication of GaAs Devices (Inst. of Electrical Engineers, UK, 2005).

    Book  Google Scholar 

  11. D. A. Allwood, S. Cox, N. J. Mason, R. Palmer, R. Young, and P. J. Walker, Thin Solid Films 412, 76 (2002).

    Article  ADS  Google Scholar 

  12. G. Marrakchi, M. Gavard, G. Guillot, E. Rosencher, and A. Nauailhat, Appl. Phys. Lett. 54, 540 (1988).

    Article  ADS  Google Scholar 

  13. Yu. V. Kapitonov, in Proceedings of the Young Scientists Conference on Physics and Progress, to the 100th anniversary of V.A. Fock’s Birth (SPb., Russia, 2008), p. 169. http://www.phys.spbu.ru/content/File/PhysicsAnd-Progress/Bokk-2008.pdf

    Google Scholar 

  14. P. N. Brunkov, A. A. Gutkin, A. K. Moiseenko, Yu. G. Musikhin, V. V. Chaldyshev, N. N. Cherkashin, S. G. Konnikov, V. V. Preobrazhenskii, M. A. Putyato, and B. R. Semyagin, Semiconductors 38, 387 (2004).

    Article  ADS  Google Scholar 

  15. B. I. Sysoev, N. N. Bezryadin, G. I. Kotov, B. L. Agapov, and V. D. Strygin, Semiconductors 29, 12 (1995).

    ADS  Google Scholar 

  16. V. N. Bessolov and M. V. Lebedev, Semiconductors 32, 1141 (1998).

    Article  ADS  Google Scholar 

  17. N. N. Bezryadin, G. I. Kotov, S. V. Kuzubov, I. N. Arsen’ev, I. S. Tarasov, A. A. Starobubtsev, and A. B. Sysoev, Tech. Phys. Lett. 34, 428 (2008).

    Article  ADS  Google Scholar 

  18. N. N. Bezryadin, G. I. Kotov, A. V. Kadantsev, L. V. Vasil’eva, and Yu. N. Vlasov, Instrum. Exp. Tech. 53, 430 (2010).

    Article  Google Scholar 

  19. A. V. Markov, A. Y. Polyakov, N. B. Smirnov, Y. N. Bolsheva, A. V. Govorkov, and B. N. Sharonov, Solid State Electron. 46, 269 (2002).

    Article  ADS  Google Scholar 

  20. T. J. Drummond, Phys. Rev. B 59, 8182 (1999).

    Article  MathSciNet  ADS  Google Scholar 

  21. C. V. Reddy, S. Fing, and C. D. Beling, Phys. Rev. B 54, 11290 (1996).

    Article  ADS  Google Scholar 

  22. A. Cavallini and L. Polenta, J. Appl. Phys. 98, 023708 (2005).

    Article  ADS  Google Scholar 

  23. P. N. K. Deenapanray, H. H. Tan, C. Jagadish, and F. D. Auret, J. Appl. Phys. 88, 5017 (2000).

    Article  Google Scholar 

  24. V. N. Brudnyi and V. V. Peshev, Semiconductors 37, 140 (2003).

    Article  ADS  Google Scholar 

  25. B. L. Agapov, N. N. Bezryadin, Yu. N. Synorov, G. I. Kotov, E. A. Tatokhin, A. A. Starodubtsev, and S. V. Kuzubov, J. Surf. Invest. 1, 750 (2007).

    Article  Google Scholar 

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Authors and Affiliations

  1. Voronezh State Technological Academy, Voronezh, 394000, Russia

    N. N. Bezryadin, G. I. Kotov, Yu. N. Vlasov & A. A. Starodubtsev

  2. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    I. N. Arsentyev

Authors
  1. N. N. Bezryadin
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  2. G. I. Kotov
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  3. I. N. Arsentyev
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  4. Yu. N. Vlasov
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  5. A. A. Starodubtsev
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Correspondence to N. N. Bezryadin.

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Original Russian Text © N.N. Bezryadin, G.I. Kotov, I.N. Arsentyev, Yu.N. Vlasov, A.A. Starodubtsev, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 6, pp. 756–760.

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Bezryadin, N.N., Kotov, G.I., Arsentyev, I.N. et al. Effect of the finishing treatment of a gallium arsenide surface on the spectrum of electron states in n-GaAs (100). Semiconductors 46, 736–740 (2012). https://doi.org/10.1134/S1063782612060073

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  • DOI: https://doi.org/10.1134/S1063782612060073

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