Abstract
The study is concerned with MOCVD epitaxial heterostructures grown on the basis of Al x Ga y In1 − x − y As z P1 − z quinary alloys in the region of alloy compositions isoperiodic to GaAs. By the X-ray diffraction technique and atomic force microscopy, it is shown that, on the surface of the heterostructures, there are nanometric objects capable of lining up along a certain direction. From calculations of the crystal lattice parameters with consideration for internal strains, it can be inferred that the new compound is a phase based on the Al x Ga y In1 − x − y As z P1 − z alloy.
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Original Russian Text © P.V. Seredin, A.V. Glotov, E.P. Domashevskaya, A.S. Lenshin, M.S. Smirnov, I.N. Arsentyev, D.A. Vinokurov, A.L. Stankevich, I.S. Tarasov, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 6, pp. 739–750.
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Seredin, P.V., Glotov, A.V., Domashevskaya, E.P. et al. Structural and spectral features of MOCVD Al x Ga y In1 − x − y As z P1 − z /GaAs (100) alloys. Semiconductors 46, 719–729 (2012). https://doi.org/10.1134/S106378261206019X
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DOI: https://doi.org/10.1134/S106378261206019X