Abstract
The results of experimental studies aimed at the development of GaP x N y As1 − x − y alloy nanoheterostructures with a new type of transparent electrode based on CVD graphene are reported. The electroluminescence properties of the structures are studied. High stability of the emission wavelength (2–3 nm) in conditions of increasing temperature (from 12°C to 60°C) and increasing injection current (from 0 A to 1 A) is demonstrated.
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Original Russian Text © A.V. Babichev, V.Yu. Butko, M.S. Sobolev, E.V. Nikitina, N.V. Kryzhanovskaya, A.Yu. Egorov, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 6, pp. 815–819.
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Babichev, A.V., Butko, V.Y., Sobolev, M.S. et al. Electroluminescence of GaP x N y As1 − x − y nanoheterostructures through a transparent electrode made of CVD graphene. Semiconductors 46, 796–800 (2012). https://doi.org/10.1134/S106378261206005X
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DOI: https://doi.org/10.1134/S106378261206005X