Abstract
The crystal structure, Sn and V distribution over the length of single-crystal ingots, and galvanomagnetic effects in low magnetic fields (4.2 K ≤ T ≤ 300 K, B ≤ 0.07 T) in Pb1−x−y Sn x V y Te alloys (x = 0.05−0.21, y ≤ 0.015) are studied. It is shown that all the samples are single-phase, while the Sn and V concentrations exponentially increase from the beginning to the end of the ingots. Upon doping with V, a decrease in the concentration of free holes and a metal-insulator transition are found. They are related to the appearance of a deep impurity level of V in the band gap, electron redistribution between the level and the valence band, and pinning of the Fermi-level to the impurity level. The shift rate of the V level relative to the conduction band bottom is determined and a diagram of the reconstruction of the electronic structure of the Pb1 − x − y Sn x V y Te alloy upon varying the host composition is suggested.
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Original Russian Text © E.P. Skipetrov, A.N. Golovanov, A.V. Knotko, E.I. Slyn’ko, V.E. Slyn’ko, 2012, published in Fizika i Tekhnika Poluprovodnikov, 2012, Vol. 46, No. 6, pp. 761–768.
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Skipetrov, E.P., Golovanov, A.N., Knotko, A.V. et al. Vanadium deep impurity level in diluted magnetic semiconductors Pb1 − x − y Sn x V y Te. Semiconductors 46, 741–748 (2012). https://doi.org/10.1134/S106378261206022X
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DOI: https://doi.org/10.1134/S106378261206022X