Ion Implantation in Semiconductors

Science and Technology

  • Susumu Namba

Table of contents

  1. Front Matter
    Pages i-xv
  2. III–V Compound Semiconductors I

    1. Front Matter
      Pages 1-1
    2. F. H. Eisen
      Pages 3-17
    3. H. Müller, J. Gyulai, J. W. Mayer, F. H. Eisen, B. Welch
      Pages 19-25
    4. P. L. F. Hemment, B. J. Sealy, K. G. Stephens
      Pages 27-34
    5. K. Gamo, M. Takai, M. S. Lin, K. Masuda, S. Namba
      Pages 35-40
    6. T. Miyazaki, M. Tamura
      Pages 41-46
  3. III–V Compound Semiconductors II

    1. Front Matter
      Pages 55-55
    2. H. Harada, M. Fujimoto
      Pages 73-81
    3. T. Itoh, T. Matsumoto, J. Kasahara
      Pages 83-88
    4. Y. Makita, S. Gonda, H. Tanoue, T. Tsurushima, S. Maekawa
      Pages 89-94
    5. T. Shimada, Y. Shiraki, K. F. Komatsubara
      Pages 101-106
    6. T. Inada, Y. Ohnuki
      Pages 107-114
    7. Hideki Matsumura, Seijiro Furukawa
      Pages 125-131
    8. T. Matsumori, K. Miyazaki, S. Shigetomi
      Pages 133-139

About this book


The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.


ESR Plantation chemistry corrosion crystal diffusion electron metals paper scattering semiconductor thin films

Editors and affiliations

  • Susumu Namba
    • 1
  1. 1.Faculty of Engineering ScienceOsaka UniversityToyonaka, OsakaJapan

Bibliographic information

  • DOI
  • Copyright Information Springer-Verlag US 1975
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4684-2153-8
  • Online ISBN 978-1-4684-2151-4
  • About this book