Encapsulation of Ion Implanted GaAs

  • P. L. F. Hemment
  • B. J. Sealy
  • K. G. Stephens


Electrical activity from donor ions implanted into GaAs has only been achieved after a post implantation anneal cycle to temperatures in excess of 650°C. SiO2 coatings have proved unsatisfactory whilst Si3N4 layers are good up to at least 750°C. From preliminary measurements Ga2O3 films also show promising characteristics.


Gallium Oxide Epitaxial GaAs Si3N4 Layer Atomic Profile Ga2O3 Film 
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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • P. L. F. Hemment
    • 1
  • B. J. Sealy
    • 1
  • K. G. Stephens
    • 1
  1. 1.Department of Electronic and Electrical EngineeringUniversity of SurreyGuildford, SurreyUK

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