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Encapsulation of Ion Implanted GaAs

  • P. L. F. Hemment
  • B. J. Sealy
  • K. G. Stephens

Abstract

Electrical activity from donor ions implanted into GaAs has only been achieved after a post implantation anneal cycle to temperatures in excess of 650°C. SiO2 coatings have proved unsatisfactory whilst Si3N4 layers are good up to at least 750°C. From preliminary measurements Ga2O3 films also show promising characteristics.

Keywords

Gallium Oxide Epitaxial GaAs Si3N4 Layer Atomic Profile Ga2O3 Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    J.S. Harris, F.H. Eisen, B. Welch, J.D. Haskell, R.D. Pashley S J.W. Mayer. Appl. Phys. Lett., 21, 601, (1972);ADSCrossRefGoogle Scholar
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    4a) and Yorktown Heights Conf. Ion Implantation in Semiconductors and other Materials, ed. B.L. Crowder, Dec. 1972.Google Scholar
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    J.M. Woodcock, J.M. Shannon and D.J. Clark, to be published.Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • P. L. F. Hemment
    • 1
  • B. J. Sealy
    • 1
  • K. G. Stephens
    • 1
  1. 1.Department of Electronic and Electrical EngineeringUniversity of SurreyGuildford, SurreyUK

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