Encapsulation of Ion Implanted GaAs
Electrical activity from donor ions implanted into GaAs has only been achieved after a post implantation anneal cycle to temperatures in excess of 650°C. SiO2 coatings have proved unsatisfactory whilst Si3N4 layers are good up to at least 750°C. From preliminary measurements Ga2O3 films also show promising characteristics.
KeywordsGallium Oxide Epitaxial GaAs Si3N4 Layer Atomic Profile Ga2O3 Film
Unable to display preview. Download preview PDF.
- 2).L.J. van der Pauw. Philips Res. Rept. 13, 1, (1958).Google Scholar
- 3).E.C. Bell, A.E. Glaccum, P.L.F. Hemment, K.G. Stephens and J.E. Tansey, to be published.Google Scholar
- 4a).4a) and Yorktown Heights Conf. Ion Implantation in Semiconductors and other Materials, ed. B.L. Crowder, Dec. 1972.Google Scholar
- 5).J.M. Woodcock, J.M. Shannon and D.J. Clark, to be published.Google Scholar