Electrical Properties of Proton Bombarded N-Type GaAs
The effect of 60–380 KeV proton bombardments on the electrical properties of N-type GaAs has been studied by C-V and Hall-effect measurements. The thickness of the semi-insulating layer produced by the bombardments is nearly equal to the projected proton range. Prom Hall-effect measurements, it is found that the donor level of 0.15 eV is created by proton bombardments.
KeywordsHall Mobility Schottky Barrier Diode Deep Donor Proton Bombardment Proton Dose
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