Electrical Properties of Proton Bombarded N-Type GaAs

  • H. Harada
  • M. Fujimoto


The effect of 60–380 KeV proton bombardments on the electrical properties of N-type GaAs has been studied by C-V and Hall-effect measurements. The thickness of the semi-insulating layer produced by the bombardments is nearly equal to the projected proton range. Prom Hall-effect measurements, it is found that the donor level of 0.15 eV is created by proton bombardments.


Hall Mobility Schottky Barrier Diode Deep Donor Proton Bombardment Proton Dose 
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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • H. Harada
    • 1
  • M. Fujimoto
    • 1
  1. 1.Musashino Electrical Communication LaboratoryMusashinoshi, TokyoJapan

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