Abstract
The effect of 60–380 KeV proton bombardments on the electrical properties of N-type GaAs has been studied by C-V and Hall-effect measurements. The thickness of the semi-insulating layer produced by the bombardments is nearly equal to the projected proton range. Prom Hall-effect measurements, it is found that the donor level of 0.15 eV is created by proton bombardments.
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© 1975 Plenum Press, New York
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Harada, H., Fujimoto, M. (1975). Electrical Properties of Proton Bombarded N-Type GaAs. In: Namba, S. (eds) Ion Implantation in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2151-4_9
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DOI: https://doi.org/10.1007/978-1-4684-2151-4_9
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-2153-8
Online ISBN: 978-1-4684-2151-4
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