ESR Studies of Annealing Behavior of Nitrogen-Implanted GaP

  • T. Matsumori
  • K. Miyazaki
  • S. Shigetomi

Abstract

Annealing behavior (up to 1000°C) of nitrogen-implanted GaP has been studied using an ESR technique. The spectrum for samples as implanted is symmetrical, Lorentzian and isotropic, and its g-value = 2.0032 ± 0.0004, the line width ΔHms1~6 gauss, which is due to the disordered state. Two recovery stages have been observed in the isochronal annealing curve. The activation energy for the first stage (up to 150°C) is 0.22 – 0.23 eV, and for the second (300 – 500°C) is 1.40 – 1.50 eV. The spectrum anneals out at ~500°C. On the other hand, some weak lines due to the anisotropic damage centers have appeared after the ~100°C anneal. Moreover, the other structural line which is enhanced by illumination at 4920 or 7050 Å has been detected. After the 700 or 750 °C anneal, the hyperfine spectrum of the implanted N14 (with illumination at 5180 or 7050 A at 4.2 K) which is evidenced 3 lines centered about a g-value of 2.017, and the spectrum due to the secondary defects of which g-value is 2.0030 ± 0.0004 and ΔHms1~6 gauss have been detected.

Keywords

Zinc Assure Halogen Aniso 

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References

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    T. Shimada, Y. Shiraki and K. F. Komatsubara, Proc. 4th Int. Conf. on Ion Implantation.Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • T. Matsumori
    • 1
  • K. Miyazaki
    • 1
  • S. Shigetomi
    • 1
  1. 1.Department of Electronic Engineering, Faculty of EngineeringTokai UniversityShibuya, TokyoJapan

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