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ESR Studies of Annealing Behavior of Nitrogen-Implanted GaP

  • T. Matsumori
  • K. Miyazaki
  • S. Shigetomi

Abstract

Annealing behavior (up to 1000°C) of nitrogen-implanted GaP has been studied using an ESR technique. The spectrum for samples as implanted is symmetrical, Lorentzian and isotropic, and its g-value = 2.0032 ± 0.0004, the line width ΔHms1~6 gauss, which is due to the disordered state. Two recovery stages have been observed in the isochronal annealing curve. The activation energy for the first stage (up to 150°C) is 0.22 – 0.23 eV, and for the second (300 – 500°C) is 1.40 – 1.50 eV. The spectrum anneals out at ~500°C. On the other hand, some weak lines due to the anisotropic damage centers have appeared after the ~100°C anneal. Moreover, the other structural line which is enhanced by illumination at 4920 or 7050 Å has been detected. After the 700 or 750 °C anneal, the hyperfine spectrum of the implanted N14 (with illumination at 5180 or 7050 A at 4.2 K) which is evidenced 3 lines centered about a g-value of 2.017, and the spectrum due to the secondary defects of which g-value is 2.0030 ± 0.0004 and ΔHms1~6 gauss have been detected.

Keywords

Isochronal Annealing Annealing Behavior Secondary Defect Damage Center Hyperfine Line 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    B. L. Crowder, R. S. Title, M. H. Brodsky and G. D. Pettit, Appl. Phys. Letters 16, 205 (1970).ADSCrossRefGoogle Scholar
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    J. L. Haskell, W. A. Grant, G. A. Stevens and J. L. Whitton, Proc. 2nd Int. Conf. on Ion Implantation, edited I. Ruge and J. Graul, III — 8, p. 193 (1971).Google Scholar
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    T. Shimada, Y. Shiraki and K. F. Komatsubara, Proc. 4th Int. Conf. on Ion Implantation.Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • T. Matsumori
    • 1
  • K. Miyazaki
    • 1
  • S. Shigetomi
    • 1
  1. 1.Department of Electronic Engineering, Faculty of EngineeringTokai UniversityShibuya, TokyoJapan

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