The Effects of Ion Dose and Implantation Temperature on Enhanced Diffusion in Selenium Ion-Implanted Gallium Arsenide
Electrical properties and photoluminescence have been studied in GaAs implanted with Se at room temperature, 200 °C and 400 °C. For the low dose case between 10 and 1013 ions/cm2, electrical activities for hot implants were larger by a factor of two than those for the RT implant, whereas at a dose of 1014 ions/cm2 the difference between them was reduced. The profiles of carrier concentration were characterized by deep diffusion of implanted atoms. The diffusion is enhanced with the increase of dose. Implantation temperature had little effect on the enhancement for the low dose case, while at a dose of 10 ions/cm hot implants increased the depth of the diffusion tail. A study of photoluminescence has indicated that two kinds of defects were introduced by implantation; one is dominant at low doses and responsible for a broad band emission centered at 1.31 eV, and the another is Ga vacancy-Se donor complex, which is increased with dose and affects the enhanced diffusion. It is suggested that the broad band at 1.31 eV is attributed to As vacancy.
KeywordsHall Effect Measurement Broad Band Emission Doping Efficiency Sheet Carrier Concentration Implantation Temperature
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