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Photoluminescence of Zinc Implanted n-Type GaAs

  • T. Itoh
  • T. Matsumoto
  • J. Kasahara

Abstract

Photoluminescence measurements of ion-implanted GaAs were performed to investigate recovery of induced damages. Silicon-doped n-type GaAs samples with (100) orientation were impIanted with Zn in a dose range of 5 x 10 to 5 x 10 ions/cm2 and were subsequently annealed for 20 min at temperatures between 600°C and 900°C. A well-defined single emission peak due to Zn acceptor level was obtained in samples implanted with a dose of 1 x 10 ions/cm and annealed at 800°C. It was found that the implanted-and-annealed samples contained fewer defects than unimplanted ones which were given the same heat treatment. Compensation of thermally induced Ga-vacancies by implanted Zn atoms plays a dominant role in the recovery process. In-depth variation of photoluminescence spectrum was also studied by succesively etching the implanted surface. This technique was found very useful for profiling implanted atoms and vacancies.

Keywords

Photoluminescence Spectrum Photoluminescence Measurement Unimplanted Sample Shallow Surface Layer Total Emission Intensity 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    T. Itoh and J. Kasahara, to be published.Google Scholar
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    J. Gyulai, J.W. Mayer, I.V. Mitchell and V. Rodriguez, Appl. Phys. Letters, 17, 332 (1970)ADSCrossRefGoogle Scholar
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    L.L. Chang, L. Esaki and R. Tsu, Appl. Phys. Letters, 19, 143 (1971)ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • T. Itoh
    • 1
  • T. Matsumoto
    • 1
  • J. Kasahara
    • 1
  1. 1.School of Science and EngineeringWaseda UniversityShinjuku-ku, TokyoJapan

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