Photoluminescence of Zinc Implanted n-Type GaAs
Photoluminescence measurements of ion-implanted GaAs were performed to investigate recovery of induced damages. Silicon-doped n-type GaAs samples with (100) orientation were impIanted with Zn in a dose range of 5 x 10 to 5 x 10 ions/cm2 and were subsequently annealed for 20 min at temperatures between 600°C and 900°C. A well-defined single emission peak due to Zn acceptor level was obtained in samples implanted with a dose of 1 x 10 ions/cm and annealed at 800°C. It was found that the implanted-and-annealed samples contained fewer defects than unimplanted ones which were given the same heat treatment. Compensation of thermally induced Ga-vacancies by implanted Zn atoms plays a dominant role in the recovery process. In-depth variation of photoluminescence spectrum was also studied by succesively etching the implanted surface. This technique was found very useful for profiling implanted atoms and vacancies.
KeywordsPhotoluminescence Spectrum Photoluminescence Measurement Unimplanted Sample Shallow Surface Layer Total Emission Intensity
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