Large Increase of Emission Efficiency in Indirect GaAsP by N-Ion Implantation
Photoluminescence from N-ion-impIanted, indirect GaAs1-xPx (x=0.52) samples was measured as a function of annealing temperature. Samples were implanted at 350°C with N ions to concentration 1017 ~ 1020 cm-3. Two conspicuous bands, in the general locations of 599.5 nm and 618 nm at 2K, appear as a result of annealing. They are due to isoelectronic impurities and the narrow band (599.5 nm) is attributed to ‘A’ line and the broad band (618 nm) is to NN line. In the measurement at 77K integrated intensity of lightly implanted samples exceeds 1000 times as large as that of unimplanted one. Emission intensity becomes nearly the same order as that of direct GaAsP. This is attributed to the emission due to the NN line.
KeywordsHigh Annealing Temperature Free Exciton Emission Efficiency Integrate Intensity Ratio Phonon Replica
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