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Ion Implantations of Mg and Zn into n-Type GaP

  • T. Inada
  • Y. Ohnuki

Abstract

Measurements of Hall-effect and sheet-resistivity and of depth of pn junction were carried out to make an electrical evaluation of p-type layer formed in GaP by either Mg or Zn ion implantation. Photoluminescence spectra were also measured for the implanted GaP both at room temperature and at 100 °K.

Keywords

Ohmic Contact Effective Diffusion Coefficient Electrical Evaluation SiOx Film Bound Exciton Emission 
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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • T. Inada
    • 1
  • Y. Ohnuki
    • 1
  1. 1.College of EngineeringHosei UniversityKoganei, TokyoJapan

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