Ion Implantations of Mg and Zn into n-Type GaP
Measurements of Hall-effect and sheet-resistivity and of depth of pn junction were carried out to make an electrical evaluation of p-type layer formed in GaP by either Mg or Zn ion implantation. Photoluminescence spectra were also measured for the implanted GaP both at room temperature and at 100 °K.
KeywordsOhmic Contact Effective Diffusion Coefficient Electrical Evaluation SiOx Film Bound Exciton Emission
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