Ion Implantation of Cd and Te in GaAs Crystals
70keV Cd and Te ions were implanted in GaAs crystals at various temperature to investigate lattice location, defects and their annealing characteristics by means of He ion channeling and photoluminescence measurements. It was found by channeling angular scan measurements that high substitutional fraction of Te and Cd was obtained by the implantations between 200 and 300°C. For implantations above 200°C defect peak appears at the depth deeper by 3–4 times than the LSS projected range. It was observed that implantations at 500°C through SiO2 and Si3N4 film on the surface was ineffective for the improvement both in the substitutional fraction and defect density. From photoluminescence measurements it was found that As pre-implan-tation was effective to suppress the formation of As vacancy.
KeywordsLattice Location Edge Emission Photoluminescence Measurement GaAs Crystal Implantation Temperature
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