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Compensating Layers in GaAs by Ion Implantation: Application to Integrated Optics

  • P. N. Favennec
  • E. V. K. Rao

Abstract

We show that the compensation in 0+ ions implanted GaAs is of two different origins: implantation induced defects and implanted oxygen atomso We give a few examples of optical waveguides in near IR region realized by H+ implantation and we discuss the using 0+ implanted layers to realize light guides as the compensation at high anneal temperatures is stable.

Keywords

High Anneal Temperature Optical Waveguide Light Guide Removal Ratio Carrier Concentration Profile 
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References

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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • P. N. Favennec
    • 1
  • E. V. K. Rao
    • 1
  1. 1.Centre National d’Etudes des TélécommunicationsLannionFrance

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