Electrical and Photoluminescent Properties of Zinc Implanted GaAs0.62P0.38
High temperature annealing characteristics of electrical and photoluminescent properties of GaAs0.62P0.38 implanted with 50 keV Zn at room temperature have been studied. Electrical activities, approximately independent of Zn dose, increased with annealing temperature, and reached about 100% at 950°C. Previously reported abnormally high electrical activities (~300% at 800°C) were not observed. A close correlation between photoluminescence intensity and effective surface carrier concentration was found. Qualitative explanation of annealing behaviors is presented.
KeywordsGallium Arsenide Hole Mobility Photoluminescent Property Hall Effect Measurement Annealing Behavior
Unable to display preview. Download preview PDF.
- 4.W.S. Johnson and J.F. Gibbons, Projected Range Statistics in Semiconductors (Standord University Bookstore, Standord, 1970).Google Scholar
- 7.D.L. Kendall, Semiconductors and Semlmetals, edited by R. K. Willardson and A. C. Beer(Academic Press, New York, 1968), p. 163.Google Scholar
- 10.M. R. Lorenz and A. E. Blakeslee, Gallium Arsenide and Related Compounds (The Institute of Physics, London, 1972), p. 106.Google Scholar
- 11.V. K. Subashiev and G. A. Chalikyan, Soviet Phys. Semicond. 3, 1216 (1970).Google Scholar