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Electrical and Photoluminescent Properties of Zinc Implanted GaAs0.62P0.38

  • H. Okabayashi

Abstract

High temperature annealing characteristics of electrical and photoluminescent properties of GaAs0.62P0.38 implanted with 50 keV Zn at room temperature have been studied. Electrical activities, approximately independent of Zn dose, increased with annealing temperature, and reached about 100% at 950°C. Previously reported abnormally high electrical activities (~300% at 800°C) were not observed. A close correlation between photoluminescence intensity and effective surface carrier concentration was found. Qualitative explanation of annealing behaviors is presented.

Keywords

Gallium Arsenide Hole Mobility Photoluminescent Property Hall Effect Measurement Annealing Behavior 
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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • H. Okabayashi
    • 1
  1. 1.Central Research LaboratoriesNippon Electric Company, Ltd.KawasakiJapan

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