Electrical and Photoluminescent Properties of Zinc Implanted GaAs0.62P0.38

  • H. Okabayashi


High temperature annealing characteristics of electrical and photoluminescent properties of GaAs0.62P0.38 implanted with 50 keV Zn at room temperature have been studied. Electrical activities, approximately independent of Zn dose, increased with annealing temperature, and reached about 100% at 950°C. Previously reported abnormally high electrical activities (~300% at 800°C) were not observed. A close correlation between photoluminescence intensity and effective surface carrier concentration was found. Qualitative explanation of annealing behaviors is presented.


Gallium Arsenide Hole Mobility Photoluminescent Property Hall Effect Measurement Annealing Behavior 
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  1. 1.
    K. R. Faulker and A. Todkill, Ion Implantation in Semiconductors, editer by I. Ruge and J. Graul (Springer-Verlag, Berlin, 1971), p. 222.CrossRefGoogle Scholar
  2. 2.
    T. Itoh and T. Oana, J. Appl. Phys. 44, 4982 (1973).ADSCrossRefGoogle Scholar
  3. 3.
    T. Itoh and T. Oana, Appl. Phys. Lett. 24, 320 (1974).ADSCrossRefGoogle Scholar
  4. 4.
    W.S. Johnson and J.F. Gibbons, Projected Range Statistics in Semiconductors (Standord University Bookstore, Standord, 1970).Google Scholar
  5. 5.
    T. Tuba, K. Gamo, K. Masuda and S. Namba, Japan. J. Appl. Phys. 13, 641 (1974).ADSCrossRefGoogle Scholar
  6. 6.
    S.T. Picraux, Rad. Effects 17, 261 (1973).CrossRefGoogle Scholar
  7. 7.
    D.L. Kendall, Semiconductors and Semlmetals, edited by R. K. Willardson and A. C. Beer(Academic Press, New York, 1968), p. 163.Google Scholar
  8. 8.
    L. L. Chang and G. L. Pearson, J. Phys. Chem. Solids 25, 23 (1964).ADSCrossRefGoogle Scholar
  9. 9.
    L. L. Chang, Solid-State Electron. 7, 853 (1964).ADSCrossRefGoogle Scholar
  10. 10.
    M. R. Lorenz and A. E. Blakeslee, Gallium Arsenide and Related Compounds (The Institute of Physics, London, 1972), p. 106.Google Scholar
  11. 11.
    V. K. Subashiev and G. A. Chalikyan, Soviet Phys. Semicond. 3, 1216 (1970).Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • H. Okabayashi
    • 1
  1. 1.Central Research LaboratoriesNippon Electric Company, Ltd.KawasakiJapan

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