The Effects of Ion-Implanted Ga, As, and P on the Subsequent Diffusion of Ion-Implanted Zn in GaAs0.6P0.4

  • E. B. Stoneham
  • J. F. Gibbons


Interesting results have been obtained in experiments in which samples of GaAs0.6P0.4 implanted with Zn were also implanted with other ions such as Ga, As, and P prior to annealing. In particular, the diffusion rate of the implanted Zn during the anneal can be strongly inhibited by the co-implantation of As or P, whereas Ga implantation has only a minor effect.


Effective Diffusion Coefficient Junction Depth Diffusion Depth Polycrystalline Layer Transmission Electron Microscopy Work 


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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • E. B. Stoneham
    • 1
  • J. F. Gibbons
    • 1
  1. 1.Stanford Electronics LaboratoriesStanford UniversityStanfordUSA

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