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The Effects of Ion-Implanted Ga, As, and P on the Subsequent Diffusion of Ion-Implanted Zn in GaAs0.6P0.4

  • E. B. Stoneham
  • J. F. Gibbons

Abstract

Interesting results have been obtained in experiments in which samples of GaAs0.6P0.4 implanted with Zn were also implanted with other ions such as Ga, As, and P prior to annealing. In particular, the diffusion rate of the implanted Zn during the anneal can be strongly inhibited by the co-implantation of As or P, whereas Ga implantation has only a minor effect.

Keywords

Effective Diffusion Coefficient Junction Depth Diffusion Depth Polycrystalline Layer Transmission Electron Microscopy Work 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

  1. 1.
    E. B. Stoneham, “A Nonaqueous Electrolyte for Anodizing GaAs and GaAs0.6P0.4,” to be published in J. Electrochem. Soc, October 1974.’Google Scholar
  2. 2.
    L. L. Chang and G. L. Pearson, J. Appl. Phys. 35, 1960 (1964).ADSCrossRefGoogle Scholar
  3. 3.
    A. C. Wang, “Zinc Diffusion in Intrinsic and Heavily Doped Gallium Arsenide,” Ph.D. Thesis, Stanford University, Stanford, California (1970).Google Scholar
  4. 4.
    M. A. Littlejohn, private communication.Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • E. B. Stoneham
    • 1
  • J. F. Gibbons
    • 1
  1. 1.Stanford Electronics LaboratoriesStanford UniversityStanfordUSA

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