The Effects of Ion-Implanted Ga, As, and P on the Subsequent Diffusion of Ion-Implanted Zn in GaAs0.6P0.4
Interesting results have been obtained in experiments in which samples of GaAs0.6P0.4 implanted with Zn were also implanted with other ions such as Ga, As, and P prior to annealing. In particular, the diffusion rate of the implanted Zn during the anneal can be strongly inhibited by the co-implantation of As or P, whereas Ga implantation has only a minor effect.
KeywordsEffective Diffusion Coefficient Junction Depth Diffusion Depth Polycrystalline Layer Transmission Electron Microscopy Work
Unable to display preview. Download preview PDF.
- 1.E. B. Stoneham, “A Nonaqueous Electrolyte for Anodizing GaAs and GaAs0.6P0.4,” to be published in J. Electrochem. Soc, October 1974.’Google Scholar
- 3.A. C. Wang, “Zinc Diffusion in Intrinsic and Heavily Doped Gallium Arsenide,” Ph.D. Thesis, Stanford University, Stanford, California (1970).Google Scholar
- 4.M. A. Littlejohn, private communication.Google Scholar