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Defect-Free Nitrogen Implantation into GaP

  • T. Shimada
  • Y. Shiraki
  • K. F. Komatsubara

Abstract

Backscattering yields and photoluminescence (PL) spectra were measured in GaP crystals implanted with 200keV-N+ ions. Backscattering results indicate that implantation at 500°C greatly reduces the radiation damage. The PL intensities of NN lines were maximum in the sample implanted with N ions of 3 × 1014 cm-2 at 500°C, and annealed at 1000°C for one hour. The PL intensity is comparable to that of the nitrogen-doped sample during the liquid phase epitaxy which is widely accepted as the best method of introducing nitrogen into GaP crystals.

Keywords

Liquid Phase Epitaxy Lattice Disorder Liquid Phase Epitaxy Growth Pair Emission Aluminum Glass 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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    J. L. Merz, E. A. Sadowski and J. W. Rodgers: Solid State Comm., 9 1037 (1971).ADSCrossRefGoogle Scholar
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    J. L. Merz, D. W. Mingay, W. M. Augustyniak and L. C. Feldman: in Proceedings of the Int. Conf. on Ion Implantation in Semiconductors 182 (1971).CrossRefGoogle Scholar
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    T. Shimada, Y. Shiraki, Y. Kato and K. F. Komatsubara: to be published in Proceedings of the Int. Conf. on Lattice Defects in Semiconductors (1974).Google Scholar
  4. (4).
    Private communication from Prof. T. Matsumori, Tokai Univ.Google Scholar

Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • T. Shimada
    • 1
  • Y. Shiraki
    • 1
  • K. F. Komatsubara
    • 1
  1. 1.Central Research LaboratoryHitachi Ltd.Kokubunji, TokyoJapan

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