Defect-Free Nitrogen Implantation into GaP
Backscattering yields and photoluminescence (PL) spectra were measured in GaP crystals implanted with 200keV-N+ ions. Backscattering results indicate that implantation at 500°C greatly reduces the radiation damage. The PL intensities of NN lines were maximum in the sample implanted with N ions of 3 × 1014 cm-2 at 500°C, and annealed at 1000°C for one hour. The PL intensity is comparable to that of the nitrogen-doped sample during the liquid phase epitaxy which is widely accepted as the best method of introducing nitrogen into GaP crystals.
KeywordsLiquid Phase Epitaxy Lattice Disorder Liquid Phase Epitaxy Growth Pair Emission Aluminum Glass
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