Ion Implantation In III–V Compounds
In this review some of the factors which are important in ion implantation doping of III–V compound semiconductors will be discussed. Emphasis will be placed on the results so far obtained in GaAs. A discussion of the results in other III–V materials will be included as well as some comments on the application of ion implantation to the fabrication of devices in semiconducting III–V compounds.
KeywordsGaAs Sample Doping Efficiency Electrical Profile Gallium Vacancy IMPATT Diode
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