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Ion Implantation In III–V Compounds

  • F. H. Eisen

Abstract

In this review some of the factors which are important in ion implantation doping of III–V compound semiconductors will be discussed. Emphasis will be placed on the results so far obtained in GaAs. A discussion of the results in other III–V materials will be included as well as some comments on the application of ion implantation to the fabrication of devices in semiconducting III–V compounds.

Keywords

GaAs Sample Doping Efficiency Electrical Profile Gallium Vacancy IMPATT Diode 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • F. H. Eisen
    • 1
  1. 1.Science CenterRockwell InternationalThousand OaksUSA

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