Implantation of Silicon Into Gallium Arsenide
The electrical properties of silicon implanted layers in gallium arsenide have been investigated for the purpose of formation of n-type layers with high electron concentration. The dependence of sheet resistivity, surface carrier concentration and mobility on dose, implantation temperature and annealing temperature was determined. Peak doping levels are about 3x1018 cm -3 for 340°C implantation with 1015cm-2 dose. Diffusion of implanted silicon was also confirmed.
KeywordsGallium Arsenide Amorphous Layer Junction Depth High Electron Concentration Implantation Temperature
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