In-Depth Profile Detection Limits of Nitrogen in GaP, Nitrogen, Oxygen and Fluorine in Si by SIMS and AES
Secondary Ion Mass Spectrometry (SIMS) and Auger Electron Spectroscopy (AES) have been used to determine the distribution of nitrogen in GaP ion implanted with nitrogen, and of nitrogen, oxygen, and fluorine ion implanted into silicon. The in-depth profile detectabilities for nitrogen in GaP are in the low 1018 atoms/cm3 range and upper 1019 atoms/cm3 range for SIMS and AES analyses, respectively. The in-depth profile detestability of SIMS for fluorine and oxygen is ~5x1016 and 1019 atoms/c.c.; AES in-depth detectability limits for oxygen and fluorine are in the 1020 atoms/c.c. range.
Both nitrogen and oxygen in silicon have gaussian distributions with the projected range statistics agreeing with the LSS theoretical calculations. For nitrogen in GaP, a profile tail is observed by the SIMS technique. The profile tail could be due to channelled ions during ion implantation and a recoil process during SIMS measurements. For fluorine in silicon, a more pronounced tail was observed which can be attributed mostly to channelling and recoiling during ion implantation. Complicated profiles of fluorine were observed after annealina at temperatures above 500°C for the sample dose of 6xl015 ions/cm2.
KeywordsAuger Electron Spectroscopy Gallium Phosphide Auger Electron Spectroscopy Analysis Recoil Process Auger Electron Spectroscopy Measurement
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