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Anodic Oxidation and Profile Determination of Ion Implanted Semi-Insulating GaAs

  • H. Müller
  • J. Gyulai
  • J. W. Mayer
  • F. H. Eisen
  • B. Welch

Abstract

A new anodic oxidation process of GaAs, using N-Methylacetamide, adjusted to a pH value of 8.3 and a constant current source, was employed to evaluate Te and Si implanted profiles in semi-insulating GaAs. The samples were implanted at 350°C and encapsulated in Si3N4 for anneal at temperatures up to 900°C Differential Hall measurements indicated strong deviations from predicted Gaussian profiles and maximum carrier concentrations below 1018 cm–3.

Keywords

Anodic Oxidation Defense Advance Research Project Agency Layer Removal Sheet Resistivity Constant Current Source 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1975

Authors and Affiliations

  • H. Müller
    • 1
  • J. Gyulai
    • 1
  • J. W. Mayer
    • 1
  • F. H. Eisen
    • 2
  • B. Welch
    • 2
  1. 1.California Institute of TechnologyPasadenaUSA
  2. 2.Science CenterRockwell InternationalThousand OaksUSA

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