Two-dimensional molecular beam epitaxy of {001} CdTe on Cd and Zn terminated {001} GaAs N. K. DharC. E. C. WoodJ. H. Dinan OriginalPaper Pages: 1041 - 1046
Studies on the growth of CdTe on Si using ge interfacial layer in an organometallic vapor phase epitaxial system Wen-Sheng WangIshwara B. Bhat OriginalPaper Pages: 1047 - 1051
Thermomigration of tellurium precipitates in CdZnTe crystals grown by vertical bridgman method T. S. LeeJ. W. ParkM. J. Park OriginalPaper Pages: 1053 - 1056
Vertical bridgman techniques to homogenize zinc composition of CdZnTe substrates T. S. LeeS. B. LeeM. J. Park OriginalPaper Pages: 1057 - 1059
Assessment of the purity of cadmium and tellurium as components of the CdTe-based substrates R. TribouletA. AoudiaA. Lusson OriginalPaper Pages: 1061 - 1065
Molecular beam epitaxial HgCdTe material characteristics and device performance: Reproducibility status J. BajajJ. M. AriasW. E. Tennant OriginalPaper Pages: 1067 - 1076
Metalorganic chemical vapor deposition of HgCdTe p/n junctions using arsenic and iodine doping P. MitraT. R. SchimertM. Kestigian OriginalPaper Pages: 1077 - 1085
Real-time control of HgCdTe growth by organometallic vapor phase epitaxy using spectroscopic ellipsometry Srikanteswara Dakshina MurthyIshwara BhatPing He OriginalPaper Pages: 1087 - 1091
Low temperature growth of (100) HgCdTe layers with DtBTe in metalorganic vapor phase epitaxy K. YasudaH. HatanoM. Minamide OriginalPaper Pages: 1093 - 1097
The growth and characterization of (211) and (133) Oriented (Hg,Cd)Te epilayers (211)B GaAs by organometallic vapor phase epitaxy G. J. GouwsR. J. Muller OriginalPaper Pages: 1099 - 1104
Improvement in HgCdTe diode characteristics by low temperature post-implantation annealing Akira AjisawaNaoki Oda OriginalPaper Pages: 1105 - 1111
Effect of cooling procedure after annealing on electrical properties of Cd0.2Hg0.8Te epitaxial films grown by liquid phase epitaxy Z. KawazuS. OchiS. Takamiya OriginalPaper Pages: 1113 - 1117
Theoretical evaluation of InTIP, InTIAs, and InTISb As longwave infrared detectors A. SherM. Van SchilfgaardeA. -B. Chen OriginalPaper Pages: 1119 - 1120
Temperature dependence of band gaps in HgCdTe and other semiconductors Srinivasan KrishnamurthyA. -B. ChenM. Van Schilfgaarde OriginalPaper Pages: 1121 - 1125
Defect modeling studies in HgCdTe and CdTe M. A. BerdingA. SherM. Van Schilfgaarde OriginalPaper Pages: 1127 - 1135
Process simulation for HgCdTe infrared focal plane array flexible manufacturing C. R. HelmsJ. L. MeléndezS. Halepete OriginalPaper Pages: 1137 - 1142
Effect of dislocations on 1/f noise of long wavelength infrared photodiodes fabricated with HgCdTe layers grown on GaAs by metalorganic vapor phase epitaxy S. MurakamiH. NishinoY. Nishijima OriginalPaper Pages: 1143 - 1147
The role of surface adsorbates in the metalorganic vapor phase epitaxial growth of (Hg,Cd)Te onto (100) GaAs Substrates J. GiessJ. E. HailsD. J. Cole-Hamilton OriginalPaper Pages: 1149 - 1153
Reaction chemistry and resulting surface structure of HgCdTe etched in CH4/H2 and H2 ECR plasmas Robert C. KellerM. Seelmann-EggebertH. J. Richter OriginalPaper Pages: 1155 - 1160
The interface of metalorganic chemical vapor deposition-CdTe/HgCdTe Y. NemirovskyN. AmirE. Weiss OriginalPaper Pages: 1161 - 1168
Electrical and structural properties of epitaxial CdTe/HgCdTe interfaces V. ArielV. GarberA. Sher OriginalPaper Pages: 1169 - 1174
Characterization of CdTe for HgCdTe surface passivation L. O. BubulacW. E. TennantW. V. Mc Levige OriginalPaper Pages: 1175 - 1182
Bake stability of long-wavelength infrared HgCdTe photodiodes A. MestechkinD. L. LeeB. D. Mac Leod OriginalPaper Pages: 1183 - 1187
The relationship between lattice matching and crosshatch in liquid phase epitaxy HgCdTe on CdZnTe substrates S. P. TobinF. T. J. SmithL. G. Casagrande OriginalPaper Pages: 1189 - 1199
Electron cyclotron resonance plasma etching of HgTe-CdTe superlattices grown by photo-assisted molecular beam epitaxy K. A. HarrisD. W. EndresN. S. Dalal OriginalPaper Pages: 1201 - 1206
Origin of void defects in Hg1−xCdxTe grown by molecular beam epitaxy M. ZandianJ. M. AriasR. E. Dewames OriginalPaper Pages: 1207 - 1210
Analysis of low doping limitation in molecular beam epitaxially grown HgCdTe(211)B epitaxial layers P. S. WijewarnasuriyaM. D. LangerJ. P. Faurie OriginalPaper Pages: 1211 - 1218
Compositional dependence of cation impurity gettering in Hg1−xCdxTe José L. MeléndezJohn TregilgasC. R. Helms OriginalPaper Pages: 1219 - 1224
A comparison of the diffusion of iodine into CdTe, Hg0.8Cd0.2Te and Zn0.05Cd0.95Te E. D. JonesJ. MalzbenderJ. B. Mullin OriginalPaper Pages: 1225 - 1229
HgCdTe and other infrared material status in the ukraine V. K. Malyutenko OriginalPaper Pages: 1231 - 1238
Numerical simulation of HgCdTe detector characteristics G. M. WilliamsR. E. De Wames OriginalPaper Pages: 1239 - 1248
The magnetic field dependence of R0A products in n-on-p homojunctions and p-on-n heterojunctions from Hg0.78Cd0.22Te liquid phase epitaxy films M. C. ChenA. TurnerD. Chandra OriginalPaper Pages: 1249 - 1253
Magneto-transport characterization using quantitative mobility-spectrum analysis J. AntoszewskiD. J. SeymourC. A. Hoffman OriginalPaper Pages: 1255 - 1262
Characterization of molecular beam epitaxially grown HgCdTe epilayers by mid-infrared interband magneto-absorption P. HelgesenR. SizmannS. Løvold OriginalPaper Pages: 1263 - 1268
Photoluminescence and raman studies of high quality CdTe:I Epilayers N. C. GilesJaesun LeeC. J. Summers OriginalPaper Pages: 1269 - 1273
Status of Te-rich and Hg-rich liquid phase epitaxial technologies for the growth of (Hg,Cd)Te alloys H. R. Vydyanath OriginalPaper Pages: 1275 - 1285
Te-rich liquid phase epitaxial growth of HgCdTe on Si-based substrates F. T. SmithP. W. NortonY. P. Chen OriginalPaper Pages: 1287 - 1292
Piezoelectric effects in HgCdTe devices C. F. WanJ. D. LuttmerR. L. Strong OriginalPaper Pages: 1293 - 1297
1/f noise and material defects in HgCdTe diodes R. SchiebelD. BartholomewM. Ohlson OriginalPaper Pages: 1299 - 1303
Characterization of liquid-phase epitaxially grown HgCdTe films by magnetoresistance measurements J. S. KimD. G. SeilerM. C. Chen OriginalPaper Pages: 1305 - 1310
Nondestructive characterization of Hg1−xCdxTe layers with n-p structures by magneto-thermoelectric measurements J. BaarsD. BrinkM. Bruder OriginalPaper Pages: 1311 - 1319
Compositionally graded HgCdTe photodiodes: Prediction of spectral response from transmission spectrum and the impact of grading D. RosenfeldV. GarberG. Bahir OriginalPaper Pages: 1321 - 1328
Effect of a valence-band barrier on the quantum efficiency and background-limited dynamic resistance of compositionally graded HgCdTe P-on-n heterojunction photodiodes M. H. WeilerM. B. Reine OriginalPaper Pages: 1329 - 1339