Abstract
Interband magneto-absorption is used to characterize molecular beam epitaxially (MBE) grown HgCdTe epilayers. Both the bandgap and the Moss-Burstein shift in n-doped layers are determined from the experiments. A heterostructure sample consisting of four layers with different compositions is also analyzed. Due to the good experimental sensitivity all four bandgaps are determined, in contrast to optical transmission analysis without a magnetic field where only the lowest gap is readily visible. The interband magneto-absorption signal strongly depends on the electron mobility. This has been used as an aid to optimizing the MBE growth conditions of HgCdTe layers on different substrate orientations.
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Helgesen, P., Sizmann, R., Skauli, T. et al. Characterization of molecular beam epitaxially grown HgCdTe epilayers by mid-infrared interband magneto-absorption. J. Electron. Mater. 24, 1263–1268 (1995). https://doi.org/10.1007/BF02653083
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DOI: https://doi.org/10.1007/BF02653083