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Photoluminescence and raman studies of high quality CdTe:I Epilayers

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Abstract

Low-temperature photoluminescence (PL) studies of iodine-doped CdTe epilayers have been performed. A compensating acceptor center which gives rise to deep-level PL emission at 1.491 eV is identified. From selective excitation PL studies, we assign this 1.491 eV line to the recombination of an associate donor-acceptor close pair, consisting of nearest neighbor substitutional sodium and iodine atoms (NaCd-ITe). This neutral defect complex has a localized mode of 36.5 meV, which is much larger than the bulk CdTe lattice mode of 21.3 meV. The electronic energy level associated with this defect is 115 meV below the conduction band. Also, we use a combination of selective excitation PL and Raman spectroscopies to determine the ionization energy of the isolated shallow iodine donor (ITe) in CdTe. We find that the donor binding energy of this anion-site hydrogenic donor is 15.0 (±0.2) meV.

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Author notes

  1. J. W. Tomm

    Present address: Institut far Physik, Humboldt-Universitat zu Berlin, Unter den Linden 6, D-10099, Berlin, Germany

Authors and Affiliations

  1. Department of Physics, West Virginia University, 26506-6315, Morgantown, WV

    N. C. Giles & Jaesun Lee

  2. Quantum Microstructures Laboratory, Georgia Tech Research Institute, 30332-0800, Atlanta, GA

    T. K. Tran, J. W. Tomm & C. J. Summers

Authors
  1. N. C. Giles
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  2. Jaesun Lee
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  3. T. K. Tran
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  4. J. W. Tomm
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  5. C. J. Summers
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Giles, N.C., Lee, J., Tran, T.K. et al. Photoluminescence and raman studies of high quality CdTe:I Epilayers. J. Electron. Mater. 24, 1269–1273 (1995). https://doi.org/10.1007/BF02653084

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  • DOI: https://doi.org/10.1007/BF02653084

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