Abstract
The bake stability was examined for HgCdTe wafers and photodiodes with CdTe surface passivation deposited by thermal evaporation. Electrical and electrooptical measurements were performed on various long-wavelength infrared HgCdTe photodiodes prior to and after a ten-day vacuum bakeout at 80°C, similar to conditions used for preparation of tactical dewar assemblies. It was found that the bakeout process generated additional defects at the CdTe/ HgCdTe interface and degraded photodiode parameters such as zero bias impedance, dark current, and photocurrent. Annealing at 220°C under a Hg vapor pressure following the CdTe deposition suppressed the interface defect generation process during bakeout and stabilized HgCdTe photodiode performance.
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Mestechkin, A., Lee, D.L., Cunningham, B.T. et al. Bake stability of long-wavelength infrared HgCdTe photodiodes. J. Electron. Mater. 24, 1183–1187 (1995). https://doi.org/10.1007/BF02653072
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DOI: https://doi.org/10.1007/BF02653072