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Effect of a valence-band barrier on the quantum efficiency and background-limited dynamic resistance of compositionally graded HgCdTe P-on-n heterojunction photodiodes

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Abstract

A new analytical model for the bias-dependent quantum efficiency of a HgCdTe P-on-n heterojunction photodiode with a valence band barrier elucidates the important physics of the phenomenon and shows that the background-induced shunt resistance is a result of the same mechanism, that is, a tendency of the light-induced carriers to pile up in the base layer due to the retarding field produced by the barrier. A parameterized version of the model agrees well with experimental current-vs-voltage and noise measurements.

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Authors and Affiliations

  1. Loral Infrared & Imaging Systems, Inc., 02173, Lexington, MA

    M. H. Weiler & M. B. Reine

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  1. M. H. Weiler
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  2. M. B. Reine
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Weiler, M.H., Reine, M.B. Effect of a valence-band barrier on the quantum efficiency and background-limited dynamic resistance of compositionally graded HgCdTe P-on-n heterojunction photodiodes. J. Electron. Mater. 24, 1329–1339 (1995). https://doi.org/10.1007/BF02653092

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  • DOI: https://doi.org/10.1007/BF02653092

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