Skip to main content
SpringerLink
Log in

Electrical and structural properties of epitaxial CdTe/HgCdTe interfaces

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

In this study, CdTe epilayers were grown by metalorganic chemical vapor deposition on epitaxial HgCdTe with the purpose of developing suitable passivation for HgCdTe photodiodes. Two types of CdTe layers were investigated. One was grown directly,in situ, immediately following the growth of HgCdTe. The second type of CdTe was grown indirectly, on top of previously grown epitaxial HgCdTe samples. In this case, the surface of the HgCdTe was exposed to ambient atmosphere, and a surface cleaning procedure was applied. The material and structural properties of the CdTe/HgCdTe interfaces were investigated using secondary ion mass spectroscopy, Auger electron spectroscopy, Rutherford back scattering, and x-ray double crystal diffractometry techniques. Electrical properties of the CdTe/HgCdTe heterostructure were determined by capacitance-voltage (C-V) characterization of Schottky barrier devices and metal insulator semiconductor devices. Also, a preliminary current-voltage characterization of n+ p photodiodes was performed. A theoretical model suitable for analysis of graded heterojunction devices was used for interpretation of C-V measurements.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J.M. Arias, J.G. Pasko, M. Zandian, J. Bajaj, L. Kozolowsky, R.E. DeWames and W.E. Tenant,SPIE 2228, 210 (1994).

    Google Scholar 

  2. P.W. Norton, P.L. LoVecchio, G.N. Pultz, J. Hughes, T. Robertson, V. Lukach and K. Wong,SPIE 2228, 73 (1994).

    Google Scholar 

  3. T. Tung, L.V. DeArmond, R.F. Herald, P.E. Herning, M.H. Kalisher, D.A. Olson, R.F. Risser, A.P. Stevens and S.J. Tighe,SPIE 1735, 109 (1992).

    Google Scholar 

  4. Y. Nemirovsky and G. Bahir,J. Vac. Sci. Technol. A 7, 450 (1989).

    Article  CAS  Google Scholar 

  5. W.E. Tennant, C.A. Cockrum, J.B. Gilpin, M.A. Kinch, M.B. Reine and R.P. Ruth,J. Vac. Sci. Technol. B 10 (4), 1359 (1992).

    Article  CAS  Google Scholar 

  6. P.H. Zimmermann, M.B. Reine, K. Spignese, K. Maschhoff and J. Schiriripa,J. Vac. Sci. Technol. A 8 (2), 1182 (1990).

    Article  Google Scholar 

  7. G. Sarusi, G. Cinander, A. Zemel, D. Eger and Y. Shapira,J. Appl. Phys. 71, 5070 (1992).

    Article  CAS  Google Scholar 

  8. Y. Nemirovsky, N. Mainzer and E. Wieww,Narrow-Gap Cadmium Based Component, ed. P. Copper, (EMIS/IEEE, 1994).

  9. Yuan, L. He, J. Yu, M. Yu, Y. Qiao and J. Zhu,Appl. Phys. Lett. 58,914(1991).

    Article  CAS  Google Scholar 

  10. H. Tregilgas, C.-F. Wan and H.-Y. Liu,J. Electron. Mater. 22, 821 (1993).

    CAS  Google Scholar 

  11. Y. Nemirovsky, N. Amir and L. Djaloshinski,J. Electron. Mater. 24, 647 (1995).

    CAS  Google Scholar 

  12. V. Ariel, V. Garber, G. Bahir and A. Sher,J. Electron. Mater. 24, 655 (1995).

    CAS  Google Scholar 

  13. M. Seelmann-Eggebert, G. Carey, V. Krishnamurthy and C.R. Helms,J. Vac. Sci. Technol. B 10 (4), 1297 (1992).

    Article  CAS  Google Scholar 

  14. P.R. Bratt and T.N. Casselman,J. Vac. Sci. Technol. A 3 (1), 238 (1985).

    Article  CAS  Google Scholar 

  15. P. LoVecchio, M.B. Reine and M.N. Grimbergen,J. Vac. Sci. Technol. A 3 (1), 247 (1985).

    Article  Google Scholar 

  16. F.L. Madarasz and F. Szmulowics,J. Appl. Phys. 62 (8), 3267 (1987).

    Article  CAS  Google Scholar 

  17. R. Dornhaus and G. Nimtz,Springer Tracts in Modern Physics (Berlin: Springer, 1983).

    Google Scholar 

  18. V. Ariel-Altschul, E. Finkman and G. Bahir,IEEE Trans. Electron Dev. ED-39,1312, (1992).

    Article  Google Scholar 

  19. G. Bahir, V. Ariel, V. Garber and A. Sher,Appl. Phys. Lett.

  20. K. Ghandi, K.K. Parat, H. Ehsani and I. Bhat,Appl. Phys. Lett. 58, 828 (1991).

    Article  Google Scholar 

  21. G. Cinader, A. Raizman and A. Sher,J. Vac. Sci. Technol. B 9, 1634 (1991).

    Article  CAS  Google Scholar 

  22. R.L. Strong,J. Vac. Sci. Technol. B 10 (4), 1530(1992).

    Article  CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electrical Engineering, 32000, Technion Haifa, Israel

    V. Ariel, V. Garber, D. Rosenfeld & G. Bahir

  2. Solid State Institute, 32000, Technion, Haifa, Israel

    V. Richter

  3. SCD, P.O. Box 2250, 31021, Haifa, Israel

    N. Mainzer

  4. Soreq NRC, 70600, Yavne, Israel

    A. Sher

Authors
  1. V. Ariel
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. V. Garber
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. D. Rosenfeld
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. G. Bahir
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. V. Richter
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. N. Mainzer
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. A. Sher
    View author publications

    You can also search for this author in PubMed Google Scholar

Rights and permissions

Reprints and permissions

About this article

Cite this article

Ariel, V., Garber, V., Rosenfeld, D. et al. Electrical and structural properties of epitaxial CdTe/HgCdTe interfaces. J. Electron. Mater. 24, 1169–1174 (1995). https://doi.org/10.1007/BF02653070

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02653070

Key words

Search

Navigation