Skip to main content
Log in

Status of Te-rich and Hg-rich liquid phase epitaxial technologies for the growth of (Hg,Cd)Te alloys

  • Published:
Journal of Electronic Materials Aims and scope Submit manuscript

Abstract

In this review, we summarize the progress to-date in the technology of Hg1−xCdxTe liquid phase epitaxial growth from Hg-rich and Te-rich solutions. Areas of research which need to be pursued to further improve the state of the art in device performance are discussed.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Semiconductors and Semi-metals, 18, ed. R.K. Willardson and A.C. Beer (New York: Academic Press, 1981).

    Google Scholar 

  2. M.G. Astles,Properties of Narrow Gap Cadmium-Based Compounds, emis data reviews series No. 10 P., ed. P. Capper (U.K.: INSPEC, 1994), p. 13.

    Google Scholar 

  3. T. Tung, L.V. De Armond, R.F. Herald, P.E. Herning, M.H. Kalisher, D.A. Olson, R.F. Risser, A.P. Stevens and S.J. Tighe,Proc. SPIE (USA) 1735, 109 (1992).

    Google Scholar 

  4. T. Tung, M.H. Kalisher, A.P Stevens and P.E. Herning,Mater. Res. Soc. Symp. 90, 321 (1987).

    CAS  Google Scholar 

  5. M.H. Kalisher, P.E. Herning and T. Tung, Submitted toProgress in Crystal Growth and Characterization (to be published in 1995).

  6. E.R. Gertner,Ann. Rev. Mat. Sci. 15, 303 (1985).

    Article  CAS  Google Scholar 

  7. M.F.H. Micklethwaite,Semiconductors and Semimetals, 18, ed. R.K. Willardson and A.C. Beer (New York: Academic Press, 1981), p. 49.

    Google Scholar 

  8. T.-C. Yu and R.F. Brebrick,Properties of Narrow Gap Cadmium-Based Compounds, emis data reviews series No. 10, ed. P. Capper (U.K.: INSPEC, 1994), p. 55.

    Google Scholar 

  9. T.C. Harman,J. Electron. Mater. 9, 945 (1980).

    CAS  Google Scholar 

  10. Y. Nemirovsky, S. Margalit, E. Finkman, Y. Shacham-Diamond, I. Kidron,J. Electron. Mater. 11, 133 (1982).

    CAS  Google Scholar 

  11. S.G. Parker, D.F. Weirauch and D. Chandra,J. Cryst. Growth 86, 173 (1988).

    Article  CAS  Google Scholar 

  12. L. Colombo and G.H. Westphal,Proc. SPIE (USA) 2228, 66 (1994).

    Google Scholar 

  13. D. Edwall (Rockwell, unpublished).

  14. G. N. Pultz (Loral, unpublished).

  15. L. Colombo, G.H. Westphal, P.K. Liao, M.C. Chen and H.F. Schaake,Proc. SPIE (USA) 1683, 33 (1992).

    Google Scholar 

  16. H.R. Vydyanath,J. Elec. Chem. Soc. 128, 2609 (1981).

    Article  CAS  Google Scholar 

  17. H.R. Vydyanath,J. Elec. Chem. Soc. 128, 2619 (1981).

    Article  CAS  Google Scholar 

  18. H.R. Vydyanath and J. Ellsworth, (Aerojet, unpublished).

  19. L. Colombo and P.K. Liao,Proc. SPIE (USA) 1307, 568(1990).

    Google Scholar 

  20. M.B. Reine, K.R. Maschhoff, S.P. Tobin, P.W. Norton, J.A. Mrczkowski and E.F. Krueger,Semicon. Sci. Technol. 8, 788 (1993).

    Article  CAS  Google Scholar 

  21. M.C. Chen and L. Colombo,J. Appl. Phys. 72, 4761 (1992).

    Article  CAS  Google Scholar 

  22. Y. Nemirovsky and R. Fastow,Properties of Narrow Gap Cadmium-Based Compounds, emis data reviews series No. 10, ed. P. Capper (U.K.: INSPEC, 1994), p. 233.

    Google Scholar 

  23. H.R. Vydyanath and C.H. Hiner,J. Appl. Phys. 65, 3080 (1989).

    Article  CAS  Google Scholar 

  24. C.E. Jones, K. James, J. Merz, R. Braunstein, M. Burd, M. Eetemadi, S. Hutton and J. Drumheller,J. Vac. Sci. Technol. A 3, 131 (1985).

    Article  CAS  Google Scholar 

  25. C.C. Wang, M. Chu, S.H. Shin, W.E. Tennant, J. T. Cheung, M. Lanir, A.H.B. Van der Wyck, G.M. Williams, L.O. Bubulac and R.J. Eisel,IEEE Trans. Electron Devices ED-7, 154 (1980).

    Google Scholar 

  26. C.C. Wang,J. Vac. Sci. Technol. B 9, 1740 (1991).

    Article  CAS  Google Scholar 

  27. M. Lanir and K.J. Riley,IEEE Trans. Electron Dev. ED-29, 274 (1982).

    CAS  Google Scholar 

  28. P.R. Bratt,J. Vac. Sci. Technol. A 1 1687 (1987).

    Article  Google Scholar 

  29. P.S. Nayar, P.B. Ward, P. C. Colter, S.R. Hampton, J.W. Slawinski, L. Fishman, C.M. Callahan and H.R. Vydyanath,Technical Digest (San Francisco, CA: IEDM, 1984), p. 385.

    Google Scholar 

  30. R.A. Reidel, E.R. Gertner, D.D. Edwall and W.E. Tennant,Appl. Phys. Lett. 46, 64 (1985).

    Article  CAS  Google Scholar 

  31. H.R. Vydyanath, P.B. Ward, S.R. Hampton, L. Fishman, J. Slawinsky, C. Devaney, J. Ellsworth and T. Krueger,Proc. SPIE (USA) 686, 12 (1986).

    Google Scholar 

  32. K. Kosai and W.A. Radford,J. Vac. Sci. Tech. A 8 (2), 1254 (1990).

    Article  CAS  Google Scholar 

  33. H.R. Vydyanath, P.B. Ward, S.R. Hampton, J.B. Parkinson and B. Klank,Proc. SPIE (USA) 1097, 111 (1989).

    Google Scholar 

  34. H.R. Vydyanath, J.A. Ellsworth and C.M. DevaneyJ. Electron. Mater. 16, 13 (1987).

    CAS  Google Scholar 

  35. H.R. Vydyanath,J. Vac. Sci. Technol. B (USA) 9,1716 (1991).

    Article  CAS  Google Scholar 

  36. H.R. Vydyanath,Semicond. Sci. Technol. 5, S213 (1990).

    Article  CAS  Google Scholar 

  37. M.H. Kalisher,J. Cryst. Growth 70, 365 (1984).

    Article  CAS  Google Scholar 

  38. P. Capper, J.J.G. Gosney, C.L. Jones and I. Kenworthy,J. Cryst. Growth 71, 57 (1985).

    Article  CAS  Google Scholar 

  39. D. Chandra, M.W. Goodwin, M.C Chen and J.A. Dodge,J. Electron. Mater. 22, 1033 (1993).

    CAS  Google Scholar 

  40. L.O. Bubulac, D.D. Edwall and C.R. Viswanathan,J. Vac. Sci. Technol. B 9, 1695 (1991).

    Article  CAS  Google Scholar 

  41. D. Shaw,Semicond. Sci. Technol. 9, 1729 (1994).

    Article  CAS  Google Scholar 

  42. L.J. Kozlowski, K. Vural, S.C. Cabelli, A. Chen, D.E. Cooper, D.M. Stephenson and W.E. Kleinhans,Proc. SPIE (USA) 2268, (1994). (To be published.)

  43. L.J. Kozlowski, B. Bailey, S.A. Cabelli, D.E. Cooper, I.S. Gergis, C.A. Chen, W.V. McLevige, G.L. Bostrup, K. Vural and W.E. Tennant,Optical Engineering 33 (1), 54 (1994).

    Article  Google Scholar 

  44. P.R. Norton,Optical Engineering 30 (11), 1655 (1991).

    Article  Google Scholar 

  45. P.R. Norton,Proc. SPIE (USA) 2274 (1994). (To be published.)

  46. L.J. Kozlowski, K. Vural, V.H. Johnson, J.K. Chen, R.B. Bailey and D. Bui,Proc. SPIE 1308, 202 (1990).

    Article  CAS  Google Scholar 

  47. R.B. Bailey, L.J. Kozlowski, J. Chen, D.Q. Bui, K. Vural, D.D. Edwall, R.V. Gil, A.B. Vanderwyck, E.R. Gertner and M.B. Gubala,IEEE Trans. Electron Devices ED-38, 1104 (1991).

    Article  Google Scholar 

  48. L.J. Kozlowski, W.V. McLevige, S.A. Cabelli, A.H.B. Vanderwyck, D.E. Cooper, E.R. Blazejewski, K. Vural and W.E. Tennant,Optical Engineering 33 (3) (1994).

  49. L.J. Kozlowski, S.A. Cabelli, D.E. Cooper and K. Vural,Proc. SPIE 1946, 199(1993).

    Google Scholar 

  50. D.E. Cooper, D.Q. Bui, R.B. Bailey, L.J. Kozlowski and K. Vural,Proc. SPIE 1946, 170 (1993).

    Google Scholar 

  51. R.E. DeWames, J.M. Arias, L.J. Kozlowski and G.M. Williams,Proc. SPIE 1735, 2 (1992).

    Google Scholar 

  52. E.E. Krueger, G.N. Pultz, K.R. Maschhoff, S.P. Tobin, P.W. Norton, J.H. Rutter and M.B. Reine,Mat. Res. Soc. Symp. Proc. 299(1993).

  53. E.E. Krueger, G.N. Pultz, P.W. Norton, J.A. Mroczkowski, M.H. Weiler and M.B. Reine,Mat. Res. Soc. Symp. Proc. 216, 93 (1991).

    Google Scholar 

  54. G.N. Pultz, P.W. Norton, E.E. Krueger and M.B. Reine,J. Vac. Sci. Technol. B 9, 1724 (1991).

    Article  CAS  Google Scholar 

  55. M.B. Reine, K.R. Maschhoff, S.P. Tobin, P.W. Norton, J.A. Mroczkowski and E.E. Krueger,Semicond. Sci. Technol. 8, 788 (1993).

    Article  CAS  Google Scholar 

  56. J.A. Wilson, E.A. Patten, G.R. Chapman, K. Kosai, B. Baumgratz, P. Goetz, R. Risser, R. Herald, W.A. Radford, T. Tung and W.A. Terre,Proc. SPIE 2274 (1994). (To be published.)

  57. H. Takigawa, M. Yoshikawa and T. Mackawa,J. Cryst. Growth 86, 446 (1988).

    Article  CAS  Google Scholar 

  58. D. Chandra, J.H. Tregilgas and M.W. Goodwin,J. Vac. Sci. Tech. B 9, 1852 (1991).

    Article  CAS  Google Scholar 

  59. M. Wada and J. Suzuki,Jpn. J. Appl. Phys. 6, L972 (1988).

    Article  Google Scholar 

  60. H.R. Vydyanath, J.A. Ellsworth, J.J. Kennedy, B. Dean, CJ. Johnson, G.T. Neugebauer, J. Sepich and P.K. Lias,J. Vac. Sci. Technol. B 10, 1476 (1992).

    Article  CAS  Google Scholar 

  61. H.R. Vydyanath, J.A. Ellsworth,J.B. Parkinson, J.J. Kennedy, B. Dean, C.J. Johnson, G.T. Neugebauer, J. Sepich and P.K. Lias,J. Electronic Mater. 22, 1073 (1993).

    CAS  Google Scholar 

  62. M.F.S. Tang and D.A. Stevenson,Appl. Phys. Lett. (USA) 50, 1272 (1987).

    Article  CAS  Google Scholar 

  63. V. Leute and W. Stratmann,Z. Phys. Chem. 90, 172 (1974).

    CAS  Google Scholar 

  64. V.C Lopes, A.J. Syllaios and M.C Chen,Semicond. Sci. Tech. 8, 824 (1993).

    Article  CAS  Google Scholar 

  65. M.A. Berding, M. van Schilfgaarde and A. Sher,Phys. Rev. B 50, 1519 (1994).

    Article  CAS  Google Scholar 

  66. M.A. Berding, A. Sher and M. van Schilfgaarde,J. Electron. Mater. 24, 1129 (1995).

    Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Rights and permissions

Reprints and permissions

About this article

Cite this article

Vydyanath, H.R. Status of Te-rich and Hg-rich liquid phase epitaxial technologies for the growth of (Hg,Cd)Te alloys. J. Electron. Mater. 24, 1275–1285 (1995). https://doi.org/10.1007/BF02653085

Download citation

  • Received:

  • Revised:

  • Issue Date:

  • DOI: https://doi.org/10.1007/BF02653085

Key words

Navigation