Abstract
In this review, we summarize the progress to-date in the technology of Hg1−xCdxTe liquid phase epitaxial growth from Hg-rich and Te-rich solutions. Areas of research which need to be pursued to further improve the state of the art in device performance are discussed.
Similar content being viewed by others
References
Semiconductors and Semi-metals, 18, ed. R.K. Willardson and A.C. Beer (New York: Academic Press, 1981).
M.G. Astles,Properties of Narrow Gap Cadmium-Based Compounds, emis data reviews series No. 10 P., ed. P. Capper (U.K.: INSPEC, 1994), p. 13.
T. Tung, L.V. De Armond, R.F. Herald, P.E. Herning, M.H. Kalisher, D.A. Olson, R.F. Risser, A.P. Stevens and S.J. Tighe,Proc. SPIE (USA) 1735, 109 (1992).
T. Tung, M.H. Kalisher, A.P Stevens and P.E. Herning,Mater. Res. Soc. Symp. 90, 321 (1987).
M.H. Kalisher, P.E. Herning and T. Tung, Submitted toProgress in Crystal Growth and Characterization (to be published in 1995).
E.R. Gertner,Ann. Rev. Mat. Sci. 15, 303 (1985).
M.F.H. Micklethwaite,Semiconductors and Semimetals, 18, ed. R.K. Willardson and A.C. Beer (New York: Academic Press, 1981), p. 49.
T.-C. Yu and R.F. Brebrick,Properties of Narrow Gap Cadmium-Based Compounds, emis data reviews series No. 10, ed. P. Capper (U.K.: INSPEC, 1994), p. 55.
T.C. Harman,J. Electron. Mater. 9, 945 (1980).
Y. Nemirovsky, S. Margalit, E. Finkman, Y. Shacham-Diamond, I. Kidron,J. Electron. Mater. 11, 133 (1982).
S.G. Parker, D.F. Weirauch and D. Chandra,J. Cryst. Growth 86, 173 (1988).
L. Colombo and G.H. Westphal,Proc. SPIE (USA) 2228, 66 (1994).
D. Edwall (Rockwell, unpublished).
G. N. Pultz (Loral, unpublished).
L. Colombo, G.H. Westphal, P.K. Liao, M.C. Chen and H.F. Schaake,Proc. SPIE (USA) 1683, 33 (1992).
H.R. Vydyanath,J. Elec. Chem. Soc. 128, 2609 (1981).
H.R. Vydyanath,J. Elec. Chem. Soc. 128, 2619 (1981).
H.R. Vydyanath and J. Ellsworth, (Aerojet, unpublished).
L. Colombo and P.K. Liao,Proc. SPIE (USA) 1307, 568(1990).
M.B. Reine, K.R. Maschhoff, S.P. Tobin, P.W. Norton, J.A. Mrczkowski and E.F. Krueger,Semicon. Sci. Technol. 8, 788 (1993).
M.C. Chen and L. Colombo,J. Appl. Phys. 72, 4761 (1992).
Y. Nemirovsky and R. Fastow,Properties of Narrow Gap Cadmium-Based Compounds, emis data reviews series No. 10, ed. P. Capper (U.K.: INSPEC, 1994), p. 233.
H.R. Vydyanath and C.H. Hiner,J. Appl. Phys. 65, 3080 (1989).
C.E. Jones, K. James, J. Merz, R. Braunstein, M. Burd, M. Eetemadi, S. Hutton and J. Drumheller,J. Vac. Sci. Technol. A 3, 131 (1985).
C.C. Wang, M. Chu, S.H. Shin, W.E. Tennant, J. T. Cheung, M. Lanir, A.H.B. Van der Wyck, G.M. Williams, L.O. Bubulac and R.J. Eisel,IEEE Trans. Electron Devices ED-7, 154 (1980).
C.C. Wang,J. Vac. Sci. Technol. B 9, 1740 (1991).
M. Lanir and K.J. Riley,IEEE Trans. Electron Dev. ED-29, 274 (1982).
P.R. Bratt,J. Vac. Sci. Technol. A 1 1687 (1987).
P.S. Nayar, P.B. Ward, P. C. Colter, S.R. Hampton, J.W. Slawinski, L. Fishman, C.M. Callahan and H.R. Vydyanath,Technical Digest (San Francisco, CA: IEDM, 1984), p. 385.
R.A. Reidel, E.R. Gertner, D.D. Edwall and W.E. Tennant,Appl. Phys. Lett. 46, 64 (1985).
H.R. Vydyanath, P.B. Ward, S.R. Hampton, L. Fishman, J. Slawinsky, C. Devaney, J. Ellsworth and T. Krueger,Proc. SPIE (USA) 686, 12 (1986).
K. Kosai and W.A. Radford,J. Vac. Sci. Tech. A 8 (2), 1254 (1990).
H.R. Vydyanath, P.B. Ward, S.R. Hampton, J.B. Parkinson and B. Klank,Proc. SPIE (USA) 1097, 111 (1989).
H.R. Vydyanath, J.A. Ellsworth and C.M. DevaneyJ. Electron. Mater. 16, 13 (1987).
H.R. Vydyanath,J. Vac. Sci. Technol. B (USA) 9,1716 (1991).
H.R. Vydyanath,Semicond. Sci. Technol. 5, S213 (1990).
M.H. Kalisher,J. Cryst. Growth 70, 365 (1984).
P. Capper, J.J.G. Gosney, C.L. Jones and I. Kenworthy,J. Cryst. Growth 71, 57 (1985).
D. Chandra, M.W. Goodwin, M.C Chen and J.A. Dodge,J. Electron. Mater. 22, 1033 (1993).
L.O. Bubulac, D.D. Edwall and C.R. Viswanathan,J. Vac. Sci. Technol. B 9, 1695 (1991).
D. Shaw,Semicond. Sci. Technol. 9, 1729 (1994).
L.J. Kozlowski, K. Vural, S.C. Cabelli, A. Chen, D.E. Cooper, D.M. Stephenson and W.E. Kleinhans,Proc. SPIE (USA) 2268, (1994). (To be published.)
L.J. Kozlowski, B. Bailey, S.A. Cabelli, D.E. Cooper, I.S. Gergis, C.A. Chen, W.V. McLevige, G.L. Bostrup, K. Vural and W.E. Tennant,Optical Engineering 33 (1), 54 (1994).
P.R. Norton,Optical Engineering 30 (11), 1655 (1991).
P.R. Norton,Proc. SPIE (USA) 2274 (1994). (To be published.)
L.J. Kozlowski, K. Vural, V.H. Johnson, J.K. Chen, R.B. Bailey and D. Bui,Proc. SPIE 1308, 202 (1990).
R.B. Bailey, L.J. Kozlowski, J. Chen, D.Q. Bui, K. Vural, D.D. Edwall, R.V. Gil, A.B. Vanderwyck, E.R. Gertner and M.B. Gubala,IEEE Trans. Electron Devices ED-38, 1104 (1991).
L.J. Kozlowski, W.V. McLevige, S.A. Cabelli, A.H.B. Vanderwyck, D.E. Cooper, E.R. Blazejewski, K. Vural and W.E. Tennant,Optical Engineering 33 (3) (1994).
L.J. Kozlowski, S.A. Cabelli, D.E. Cooper and K. Vural,Proc. SPIE 1946, 199(1993).
D.E. Cooper, D.Q. Bui, R.B. Bailey, L.J. Kozlowski and K. Vural,Proc. SPIE 1946, 170 (1993).
R.E. DeWames, J.M. Arias, L.J. Kozlowski and G.M. Williams,Proc. SPIE 1735, 2 (1992).
E.E. Krueger, G.N. Pultz, K.R. Maschhoff, S.P. Tobin, P.W. Norton, J.H. Rutter and M.B. Reine,Mat. Res. Soc. Symp. Proc. 299(1993).
E.E. Krueger, G.N. Pultz, P.W. Norton, J.A. Mroczkowski, M.H. Weiler and M.B. Reine,Mat. Res. Soc. Symp. Proc. 216, 93 (1991).
G.N. Pultz, P.W. Norton, E.E. Krueger and M.B. Reine,J. Vac. Sci. Technol. B 9, 1724 (1991).
M.B. Reine, K.R. Maschhoff, S.P. Tobin, P.W. Norton, J.A. Mroczkowski and E.E. Krueger,Semicond. Sci. Technol. 8, 788 (1993).
J.A. Wilson, E.A. Patten, G.R. Chapman, K. Kosai, B. Baumgratz, P. Goetz, R. Risser, R. Herald, W.A. Radford, T. Tung and W.A. Terre,Proc. SPIE 2274 (1994). (To be published.)
H. Takigawa, M. Yoshikawa and T. Mackawa,J. Cryst. Growth 86, 446 (1988).
D. Chandra, J.H. Tregilgas and M.W. Goodwin,J. Vac. Sci. Tech. B 9, 1852 (1991).
M. Wada and J. Suzuki,Jpn. J. Appl. Phys. 6, L972 (1988).
H.R. Vydyanath, J.A. Ellsworth, J.J. Kennedy, B. Dean, CJ. Johnson, G.T. Neugebauer, J. Sepich and P.K. Lias,J. Vac. Sci. Technol. B 10, 1476 (1992).
H.R. Vydyanath, J.A. Ellsworth,J.B. Parkinson, J.J. Kennedy, B. Dean, C.J. Johnson, G.T. Neugebauer, J. Sepich and P.K. Lias,J. Electronic Mater. 22, 1073 (1993).
M.F.S. Tang and D.A. Stevenson,Appl. Phys. Lett. (USA) 50, 1272 (1987).
V. Leute and W. Stratmann,Z. Phys. Chem. 90, 172 (1974).
V.C Lopes, A.J. Syllaios and M.C Chen,Semicond. Sci. Tech. 8, 824 (1993).
M.A. Berding, M. van Schilfgaarde and A. Sher,Phys. Rev. B 50, 1519 (1994).
M.A. Berding, A. Sher and M. van Schilfgaarde,J. Electron. Mater. 24, 1129 (1995).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Vydyanath, H.R. Status of Te-rich and Hg-rich liquid phase epitaxial technologies for the growth of (Hg,Cd)Te alloys. J. Electron. Mater. 24, 1275–1285 (1995). https://doi.org/10.1007/BF02653085
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02653085