Abstract
The objectives of this work are to study the physical and chemical structure of CdTe films using secondary ion mass spectrometry (SIMS) and atomic force miroscopy (AFM) and to demonstrate the usefulness of these analytical techniques in determining the characteristics of CdTe-passivation films deposited by different techniques on HgCdTe material. Three key aspects of CdTe passivation of HgCdTe are addressed by different analytical tools: a) morphological microstructure of CdTe films examined by atomic force microscopy; b) compositional profile across the interface determined by Matrix (Te)—SIMS technique; c) concentration of various impurities across the CdTe/HgCdTe structure profiled by secondary ion-mass spectrometry.
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Bubulac, L.O., Tennant, W.E., Bajaj, J. et al. Characterization of CdTe for HgCdTe surface passivation. J. Electron. Mater. 24, 1175–1182 (1995). https://doi.org/10.1007/BF02653071
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DOI: https://doi.org/10.1007/BF02653071