Abstract
Growth characteristics of (100) HgCdTe (MCT) layers by MOVPE at low temperature of 275°C were studied using ditertiarybutyltelluride as a tellurium precursor. Growths were conducted in a vertical narrow-spacing growth cell at atmospheric pressure. Cd composition of MCT layers were controlled from 0 to 0.98 using dimethylcadmium (DMCd) flow. The growth rate was constant for increase of DMCd flow. During the growth, Cd was incorporated preferentially into the MCT layers. Enhancement of Cd incorporation in the presence of Hg was also observed. Crystal quality and electrical properties were also evaluated, which showed that high quality MCT layers can be grown at 275°C. Strain in CdTe layers grown at 425 and 275°C was also evaluated. Lattice parameter of layers grown at 425°C approached bulk value at thickness of 5 μm, while layers grown at 275°C relaxed at 1 μm. The rapid strain relaxation of layers grown at 275°C was considered due to the layer growth on the strain relaxed buffer layer. The effect of the thermal stress on the relaxation of CdTe lattice strain was also discussed.
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M. Ekawa, K. Yasuda, T. Ferid, M. Saji and A. Tanaka,J. Appl. Phys. 71, 2669 (1992).
M. Ekawa, K. Yasuda, T. Ferid, M. Saji and A. Tanaka,J. Appl. Phys. 72, 3406 (1992).
S. J.C. Irvine, J.B. Mullin and J. Tunnicliffe,J. Cryst. Growth 68, 188 (1984).
W.E. Hoke and P.J. Lemonias,Appl. Phys. Lett. 48, 1669 (1986).
R Korenstein, W.E. Hoke, P.J. Lemonias, K.T. Higa and D.C. Harris,J. Appl. Phys. 62, 4927 (1987).
J.D. Parsons and L.S. Lichitman,J. Cryst. Growth 86, 222 (1988).
P.-Y. Lu, C.-H. Wang, L.M. Williams, S.N. Chu and CM. Stiles,Appl. Phys. Lett. 49, 1372 (1986).
K. Yasuda, M. Ohno, J. Yamaguchi, T. Onakado, T. Ferid and H. Hatano,Ex. Abstract. 1993, U.S. Workshop Phys. Chem. MCT, 27 (1993).
K. Yasuda, M. Ekawa, N. Matsui, S. Sone, Y. Sugiura, A. Tanaka and M. Saji,Jpn. J. Appl. Phys. 29, 479 (1990).
I.B. Bhat, N.R. Taskar and S.K. Ghandhi,J. Vac. Sci. & Technol. A 4, 2230(1986).
K. Yasuda, S. Sone, M. Ekawa, Y. Sugiura, N. Matsui A. Tanaka and M. Saji,Tech. Digest 1st. Intl. Mtg. on Advanced Process. and Character. Technol. (APCT ’89) (1989) Tokyo, p. 131.
S. Sone, M. Ekawa, K. Yasuda, Y. Sugiura, M. Saji and A. Tanaka,Appl. Phys. Lett. 56, 539 (1990).
A.H. McDaniel, W.G. Xie and R.F. Hicks,Ex. Abstract. 1993,U.S. Workshop Phys. Chem. MCT, 25 (1993).
I.B. Bhat, N.R. Taskar and S.K. Ghandhi,J. Electrochem. Soc. 134, 196 (1987).
I.B. Bhat,J. Cryst. Growth 117, 1 (1992).
H. Takada, T. Murakami, M. Suita, K. Yasumura, Y. Endo, K. Takahashi and M. Nunoshita,J. Cryst. Growth 117, 44 (1992).
S.H. Shin, J.M. Arias, D.D. Edwall, M. Zandian, J.G. Pasko and R.E. DeWames,J. Vac. Sci. Technol. B10, 1492 (1992).
M. Tachikawa and H. Mori,Appl. Phys. Lett. 56,2225 (1990).
H. Tatsuoka, H. Kuwabara, Y. Nakanishi and H. Fujiyasu,J. Appl. Phys. 67, 6860 (1990).
S. Timosheuko,J. Opt. Soc. Am. 11, 233 (1980).
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Yasuda, K., Hatano, H., Ferid, T. et al. Low temperature growth of (100) HgCdTe layers with DtBTe in metalorganic vapor phase epitaxy. J. Electron. Mater. 24, 1093–1097 (1995). https://doi.org/10.1007/BF02653058
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DOI: https://doi.org/10.1007/BF02653058