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Real-time control of HgCdTe growth by organometallic vapor phase epitaxy using spectroscopic ellipsometry

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Abstract

The use of spectroscopic ellipsometry for monitoring the vapor phase epitaxial growth of mercury cadmium telluride (Hg1−xCdxTe) in real-time is demonstrated. The ellipsometer is used to perform system identification of the chemical vapor deposition reactor used for the growth of CdTe and to measure the response of the reactor to different growth conditions. The dynamic behavior of the reactor is also studied by evaluating the gas transport delay. The optical constants of Hg1−xCdxTe are determined at the growth temperature for different compositions.In-situ real-time composition control is performed during the growth of Hg1−xCdxTe. The required target compositions are attained by the ellipsometer and appropriate corrections are also made by the controller when a noise input in the form of a temperature variation is introduced.

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Authors and Affiliations

  1. ECSE Department, Rensselaer Polytechnic Institute, 12180, Troy, NY

    Srikanteswara Dakshina Murthy & Ishwara Bhat

  2. J.A. Woollam Co., 650 J Street, Suite 39, 68508, Lincoln, NE

    Blaine Johs, Shakil Pittal & Ping He

Authors
  1. Srikanteswara Dakshina Murthy
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  2. Ishwara Bhat
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  3. Blaine Johs
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  4. Shakil Pittal
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  5. Ping He
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Murthy, S.D., Bhat, I., Johs, B. et al. Real-time control of HgCdTe growth by organometallic vapor phase epitaxy using spectroscopic ellipsometry. J. Electron. Mater. 24, 1087–1091 (1995). https://doi.org/10.1007/BF02653057

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  • DOI: https://doi.org/10.1007/BF02653057

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