Studies on the growth of CdTe on Si using ge interfacial layer in an organometallic vapor phase epitaxial system

Abstract

Epitaxial CdTe layers were grown using organometallic vapor phase epitaxy on Si substrates with a Ge buffer layer. Ge layer was grown in the same reactor using germane gas and the reaction of germane gas with the native Si surface is studied in detail at low temperature. It is shown that germane gas can be used to “clean” the Si surface oxide prior to CdTe growth by first reducing the thin native oxide that may be present on Si. When Ge layer was grown on Si using germane gas, an induction period was observed before the continuous layer of Ge growth starts. This induction period is a function of the thickness of the native oxide present on Si and possible reasons for this behavior are outlined. Secondary ion mass spectrometry (SIMS) data show negligible outdiffusion and cross contamination of Ge in CdTe.