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Two-dimensional molecular beam epitaxy of {001} CdTe on Cd and Zn terminated {001} GaAs

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Abstract

Amorphous layers of CdTe deposited on Cd or Zn terminated GaAs {001} surfaces can be recrystallized above ∼200°C. Subsequent molecular beam epitaxy of CdTe proceeds in a two-dimensional mode and leads to layers which are specular and single domain {0011}. Threading dislocation density in these layers was 1–2 x 105 cm−2. Values of full width at half maximum for x-ray rocking curves were as low as 80 arc-s.

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Author notes

  1. N. K. Dhar

    Present address: Army Research Laboratory, 22060, Fort Belvoir, VA

Authors and Affiliations

  1. Electrical Engineering Department, University of Maryland, 20742, College Park, MD

    N. K. Dhar & C. E. C. Wood

  2. Army Research Laboratory, 22060-5838, Fort Belvoir, VA

    P. R. Boyd & H. K. Pollehn

  3. Night Vision & Electronic Sensors Directorate, 22060, Fort Belvoir, VA

    M. Martinka, J. D. Benson & J. H. Dinan

Authors
  1. N. K. Dhar
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  2. C. E. C. Wood
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  3. P. R. Boyd
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  4. H. K. Pollehn
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  5. M. Martinka
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  6. J. D. Benson
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  7. J. H. Dinan
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Dhar, N.K., Wood, C.E.C., Boyd, P.R. et al. Two-dimensional molecular beam epitaxy of {001} CdTe on Cd and Zn terminated {001} GaAs. J. Electron. Mater. 24, 1041–1046 (1995). https://doi.org/10.1007/BF02653050

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  • DOI: https://doi.org/10.1007/BF02653050

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