1. Defect engineering in implantation technology of silicon light-emitting structures with dislocation-related luminescence

   • N. A. Sobolev

   Review 26 January 2010 Pages: 1 - 23

2. Determination of the composition of binary chalcogenide glasses by X-ray fluorescence analysis

   • G. A. Bordovsky
   • A. V. Marchenko
   • E. I. Terukov

   Atomic Structure and Nonelectronic Properties of Semiconductors 26 January 2010 Pages: 24 - 27

3. Spreading resistance and compensation of charge carriers in ferromagnetic silicon implanted with manganese

   • A. F. Orlov
   • L. A. Balagurov
   • V. I. Zinenko

   Electrical and Optical Properties of Semiconductors 26 January 2010 Pages: 28 - 31

4. Effect of growth temperature on properties of transparent conducting gallium-doped ZnO films

   • A. Kh. Abduev
   • A. K. Akhmedov
   • S. N. Sulyanov

   Electrical and Optical Properties of Semiconductors 26 January 2010 Pages: 32 - 36

5. Growth of the (In₂S₃) _x (FeIn₂S₄)_{1 − x} single crystals and properties of photoelectric structures on their basis

   • I. V. Bodnar
   • V. Yu. Rud
   • E. I. Terukov

   Electrical and Optical Properties of Semiconductors 26 January 2010 Pages: 37 - 40

6. Inherent potential inhomogeneity on the semiconductor surface for equilibrium impurity distribution

   • V. B. Bondarenko
   • S. N. Davydov
   • A. V. Filimonov

   Electrical and Optical Properties of Semiconductors 26 January 2010 Pages: 41 - 44

7. Discovery of the (In₂S₃) _x (MnIn₂S₄)_{1 − x} solid solutions and fabrication of photosensitive structures based on them

   • V. Yu. Rud
   • Yu. V. Rud
   • I. V. Bodnar

   Electrical and Optical Properties of Semiconductors 26 January 2010 Pages: 45 - 49

8. Dynamics of photoluminescence and recombination processes in Sb-containing laser nanostructures

   • D. A. Firsov
   • L. Shterengas
   • G. Belenky

   Semiconductor Structures, Interfaces, and Surfaces 26 January 2010 Pages: 50 - 58

9. Monitoring the composition of the Cd_{1 − z} Zn _z Te heteroepitaxial layers by spectroscopic ellipsometry

   • M. V. Yakushev
   • V. A. Shvets
   • T. S. Shamirzaev

   Semiconductor Structures, Interfaces, and Surfaces 26 January 2010 Pages: 59 - 65

10. Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface

    • M. P. Mikhailova
    • E. V. Ivanov
    • T. Šimeček

    Low-Dimensional Systems 26 January 2010 Pages: 66 - 71

11. Formation of three-dimensional ZnSe-based semiconductor nanostructures

    • S. V. Alyshev
    • A. O. Zabezhaylov
    • E. M. Dianov

    Low-Dimensional Systems 26 January 2010 Pages: 72 - 75

12. Charge carrier transport in Ge₂₀As₂₀S₆₀ chalcogenide semiconductor films

    • L. P. Kazakova
    • K. D. Tsendin
    • I. A. Obukhova

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 26 January 2010 Pages: 76 - 78

13. The nature of emission of porous silicon produced by chemical etching

    • N. E. Korsunskaya
    • T. R. Stara
    • F. F. Sizov

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 26 January 2010 Pages: 79 - 83

14. Estimation of the adequacy of the fractal model of the atomic structure of amorphous silicon

    • A. B. Golodenko

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 26 January 2010 Pages: 84 - 88

15. Detection of singlet oxygen in photoexcited porous silicon nanocrystals by photoluminescence measurements

    • M. B. Gongalsky
    • E. A. Konstantinova
    • V. Yu. Timoshenko

    Amorphous, Vitreous, Porous, Organic, and Microcrystalline Semiconductors; Semiconductor Composites 26 January 2010 Pages: 89 - 92

16. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

    • A. F. Tsatsulnikov
    • W. V. Lundin
    • F. Hue

    Physics of Semiconductor Devices 26 January 2010 Pages: 93 - 97

17. Paradoxes of photoconductive target and optical control of secondary ion yield

    • A. G. Rokakh
    • M. D. Matasov

    Physics of Semiconductor Devices 26 January 2010 Pages: 98 - 105

18. Efficient infrared-terahertz pulse conversion in waveguide semiconductor structures

    • V. A. Kukushkin

    Physics of Semiconductor Devices 26 January 2010 Pages: 106 - 111

19. The initial stage of growth of crystalline nanowhiskers

    • N. V. Sibirev
    • M. B. Nazarenko
    • V. G. Dubrovskii

    Fabrication, Treatment, and Testing of Materials and Structures 26 January 2010 Pages: 112 - 115

20. The role of stress distribution at the film/barrier interface in formation of copper silicides

    • A. V. Panin
    • A. R. Shugurov
    • Ye. V. Shesterikov

    Fabrication, Treatment, and Testing of Materials and Structures 26 January 2010 Pages: 116 - 122

21. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes

    • W. V. Lundin
    • E. E. Zavarin
    • A. F. Tsatsulnikov

    Fabrication, Treatment, and Testing of Materials and Structures 26 January 2010 Pages: 123 - 126

22. Monte Carlo simulation of growth of nanowhiskers

    • A. G. Nastovjak
    • I. G. Neizvestny
    • Z. Sh. Yanovitskaya

    Fabrication, Treatment, and Testing of Materials and Structures 26 January 2010 Pages: 127 - 132

23. To the memory of Mikhail Grigor’evich Mil’vidskii (1932–2009)

    In Memoriam 26 January 2010 Pages: 133 - 133