Abstract
Nanostructures consisting of a 10-nm-thick sacrificial layer of ZnMgSSe and a 20-nm-thick stressed bilayer of ZnSSe/ZnSe were grown by molecular-beam epitaxy on GaAs substrates. Upon removal of the sacrificial layer by selective etching, multiwall ZnSSe/ZnSe microtubes were formed.
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Original Russian Text © S.V. Alyshev, A.O. Zabezhaylov, R.A. Mironov, V.I. Kozlovsky, E.M. Dianov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 1, pp. 75–78.
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Alyshev, S.V., Zabezhaylov, A.O., Mironov, R.A. et al. Formation of three-dimensional ZnSe-based semiconductor nanostructures. Semiconductors 44, 72–75 (2010). https://doi.org/10.1134/S1063782610010112
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DOI: https://doi.org/10.1134/S1063782610010112