Abstract
Luminescence of gas-phase singlet oxygen optically sensitized by microporous silicon at room temperature is detected for the first time. At the same time, a photoinduced increase in the photoluminescence intensity of defects at the sample surface in oxygen atmosphere is observed. It is shown that mechanical grinding of porous silicon layers yields a decrease in the amount of photogenerated singlet oxygen.
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Original Russian Text © M.B. Gongalsky, E.A. Konstantinova, L.A. Osminkina, V.Yu. Timoshenko, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 1, pp. 92–95.
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Gongalsky, M.B., Konstantinova, E.A., Osminkina, L.A. et al. Detection of singlet oxygen in photoexcited porous silicon nanocrystals by photoluminescence measurements. Semiconductors 44, 89–92 (2010). https://doi.org/10.1134/S106378261001015X
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DOI: https://doi.org/10.1134/S106378261001015X