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Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes

  • Physics of Semiconductor Devices
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Abstract

The structural and optical properties of light-emitting diode structures with an active region based on ultrathin InGaN quantum wells limited by short-period InGaN/GaN superlattices from both sides have been investigated. The dependences of the external quantum efficiency on the active region design are analyzed. It is shown that the use of InGaN/GaN structures as limiting graded-gap short-period superlattices may significantly increase the quantum efficiency.

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Authors and Affiliations

  1. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. A. Cherkashin, B. Ya. Ber & D. Yu. Kazantsev

  2. Center for Microelectronics, Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia

    A. F. Tsatsulnikov, W. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev & M. N. Mizerov

  3. Center for Material Elaboration and Structural Studies, National Center for Scientific Research, 31055, Toulouse, France

    N. A. Cherkashin, M. Hytch & F. Hue

  4. Samsung Electro-Mechanics Co. Ltd., Suwon, Gyunggi-Do, Korea

    Hee Seok Park

Authors
  1. A. F. Tsatsulnikov
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  2. W. V. Lundin
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  3. A. V. Sakharov
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  4. E. E. Zavarin
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  5. S. O. Usov
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  6. A. E. Nikolaev
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  7. N. A. Cherkashin
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  8. B. Ya. Ber
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  9. D. Yu. Kazantsev
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  10. M. N. Mizerov
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  11. Hee Seok Park
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  12. M. Hytch
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  13. F. Hue
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Corresponding author

Correspondence to A. F. Tsatsulnikov.

Additional information

Original Russian Text © A.F. Tsatsulnikov, W.V. Lundin, A.V. Sakharov, E.E. Zavarin, S.O. Usov, A.E. Nikolaev, N.A. Cherkashin, B.Ya. Ber, D.Yu. Kazantsev, M.N. Mizerov, Hee Seok Park, M. Hytch, F. Hue, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 1, pp. 96–100.

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Tsatsulnikov, A.F., Lundin, W.V., Sakharov, A.V. et al. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes. Semiconductors 44, 93–97 (2010). https://doi.org/10.1134/S1063782610010161

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  • DOI: https://doi.org/10.1134/S1063782610010161

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