Abstract
Profiles of impurity distribution and spreading resistance have been studied in the layers of ferromagnetic silicon obtained by implantation of Mn (or Co). Standard wafers of n- and p-Si with a high or low electrical conductivity were implanted with Mn ions with the dose (1−5) × 1016 cm−2. It is found that, as a result of postimplantation annealing in vacuum for 5 min at 850°C, Mn manifests itself as an amphoteric impurity and compensates acceptors in high-resistivity p-Si and donors in low-resistivity n-Si. It is shown that only an insignificant fraction of Mn ions (1–2%) is electrically active and is involved in compensation. The magnitude of compensation is used to determine energies of the levels E c − 0.12 eV for n-Si and E v + 0.32 eV for p-Si; these levels are attributed to Mn ions at interstitial sites in the silicon crystal lattice, i.e., (Mn i )−/0 and (Mn i )+/++, respectively.
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Original Russian Text © A.F. Orlov, L.A. Balagurov, I.V. Kulemanov, Yu.N. Parkhomenko, A.V. Kartavykh, V.V. Saraikin, Yu.A. Agafonov, V.I. Zinenko, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 1, pp. 30–33.
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Orlov, A.F., Balagurov, L.A., Kulemanov, I.V. et al. Spreading resistance and compensation of charge carriers in ferromagnetic silicon implanted with manganese. Semiconductors 44, 28–31 (2010). https://doi.org/10.1134/S1063782610010033
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DOI: https://doi.org/10.1134/S1063782610010033