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Inherent potential inhomogeneity on the semiconductor surface for equilibrium impurity distribution

  • Electrical and Optical Properties of Semiconductors
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Abstract

The inherent inhomogeneity of potential on the doped-semiconductor surface during the formation of equilibrium diffusion distribution for an electroactive impurity in the space-charge layers is discussed. The characteristic random-potential values are determined in the case of nondegenerate surface electron gas. The dependence of these inhomogeneities on the surface and bulk parameters is shown.

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References

  1. V. B. Bondarenko, Yu. A. Kudinov, S. G. Ershov, and V. V. Korablev, Fiz. Tekh. Poluprovodn. 30, 2068 (1996) [Semiconductors 30, 1078 (1996)].

    Google Scholar 

  2. V. B. Bondarenko, M. V. Kuz’min, and V. V. Korablev, Fiz. Tekh. Poluprovodn. 35, 964 (2001) [Semiconductors 35, 927 (2001)].

    Google Scholar 

  3. V. B. Bondarenko, V. V. Korablev, and Yu. I. Ravich, Fiz. Tekh. Poluprovodn. 38, 331 (2004) [Semiconductors 38, 319 (2004)].

    Google Scholar 

  4. F. F. Vol’kenshtein, Electronic Processes on the Semiconductor Surface During Chemisorption (Nauka, Moscow, 1987) [in Russian].

    Google Scholar 

  5. S. G. Dmitriev and V. Yu. Markin, Fiz. Tekh. Poluprovodn. 32, 1439 (1998) [Semiconductors 32, 1284 (1998)].

    Google Scholar 

  6. R. Sh. Malkovich, Mathematics of Diffusion in Semiconductors (Nauka, St.-Petersbourg, 1999) [in Russian].

    MATH  Google Scholar 

  7. V. V. Gavrilovets, V. B. Bondarenko, Yu. A. Kudinov, and V. V. Korablev, Fiz. Tekh. Poluprovodn. 34, 455 (2000) [Semiconductors 34, 441 (2000)].

    Google Scholar 

  8. S. G. Dmitriev and V. Yu. Markin, Fiz. Tekh. Poluprovodn. 34, 970 (2000) [Semiconductors 34, 931 (2000)].

    Google Scholar 

  9. S. G. Dmitriev and V. Yu. Markin, Fiz. Tekh. Poluprovodn. 36, 205 (2002) [Semiconductors 36, 197 (2002)].

    Google Scholar 

  10. T. Ando, A. Fowler, and F. Stern, Electronic Properties of Two-Dimensional Systems (Mir, Moscow, 1985); Rev. Mod. Phys. 54, 437 (1982).

    Google Scholar 

  11. I. S. Gradsteyn and I. M. Ryzhik, Table of Integrals, Series, and Products (Nauka, Moscow, 1971; Academic, New York, 1980).

    Google Scholar 

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Authors and Affiliations

  1. St. Petersburg State Polytechnical University, St. Petersburg, 195251, Russia

    V. B. Bondarenko, S. N. Davydov & A. V. Filimonov

Authors
  1. V. B. Bondarenko
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  2. S. N. Davydov
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  3. A. V. Filimonov
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Correspondence to V. B. Bondarenko.

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Original Russian Text © V.B. Bondarenko, S.N. Davydov, A.V. Filimonov, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 1, pp. 44–47.

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Bondarenko, V.B., Davydov, S.N. & Filimonov, A.V. Inherent potential inhomogeneity on the semiconductor surface for equilibrium impurity distribution. Semiconductors 44, 41–44 (2010). https://doi.org/10.1134/S1063782610010069

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  • DOI: https://doi.org/10.1134/S1063782610010069

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