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Efficient infrared-terahertz pulse conversion in waveguide semiconductor structures

  • Physics of Semiconductor Devices
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Abstract

It is shown that the use of a waveguide semiconductor structure provides a means for substantially increasing the degree of conversion of a high-power infrared pulse to a terahertz pulse by optical rectification of the infrared pulse in a medium with a quadratic nonlinearity of the permittivity. Using the example of the C/GaAs/C waveguide heterostructure, the optimal parameters of both the structure as such and the infrared pulse are determined and the duration and shape of the output terahertz pulse are calculated.

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Authors and Affiliations

  1. Institute of Applied Physics, Russian Academy of Sciences, Nizhnii Novgorod, 603950, Russia

    V. A. Kukushkin

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  1. V. A. Kukushkin
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Correspondence to V. A. Kukushkin.

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Original Russian Text © V.A. Kukushkin, 2010, published in Fizika i Tekhnika Poluprovodnikov, 2010, Vol. 44, No. 1, pp. 109–113.

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Kukushkin, V.A. Efficient infrared-terahertz pulse conversion in waveguide semiconductor structures. Semiconductors 44, 106–111 (2010). https://doi.org/10.1134/S1063782610010185

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